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BB804-1

NXP Semiconductors

BB804-1 by NXP Semiconductors

BB804-1 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C. This surface-mount, dual-element diode is ideal for tuning circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,822 parts In-Stock

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Digiode

USA . 2,747 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 330 parts In-Stock

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$2.010

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Native Components

USA . 920 parts In-Stock

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$27.245

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Northwest PG Solutions

USA . 693 parts In-Stock

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$29.970

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$26.973

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UNI Independent Distributors

Spain . 6,552 parts In-Stock

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Corphita

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Overview

Unlock the potential of your designs with the BB804-1 varactor diode from NXP Semiconductors, a leader in innovation and reliability. Crafted for superior performance at very high frequencies, this compact component offers exceptional tuning capabilities, ensuring your projects stand out. Ideal for applications ranging from RF circuits to voltage-controlled oscillators, the BB804-1 enhances efficiency and reliability, giving you the competitive edge you need!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this product well-suited for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for better circuit design flexibility, ideal for RF applications that require multiple diodes.

Frequency Band: VERY HIGH FREQUENCY

Designed to operate in the very high-frequency band, this varactor diode is perfect for RF applications, improving signal processing performance.

Surface Mount: YES

Being a surface mount device facilitates efficient use of PCB space, making it advantageous for compact electronic designs.

Maximum Reverse Current: 0.02 uA

With a maximum reverse current of only 0.02 uA, this diode minimizes leakage, enhancing overall circuit efficiency and performance.

Package Shape: RECTANGULAR

The rectangular package shape maximizes surface area for mounting while allowing for efficient thermal management.

Reverse Test Voltage: 16 V

A reverse test voltage of 16 V ensures the diode can handle standard operating conditions safely, making it reliable for various applications.

No. of Terminals: 3

The presence of three terminals facilitates easy integration into circuits, supporting a variety of connection configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces board space requirements, enabling narrower layouts and more compact designs.

Maximum Operating Temperature: 100 °C

A maximum operating temperature of 100 °C allows for use in demanding environments without risking device failure.

Terminal Position: DUAL

Dual terminal positioning provides better soldering and connection stability, enhancing overall product reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it allows for tuning circuits, making it an ideal choice for applications like voltage-controlled oscillators.

Terminal Form: GULL WING

Gull wing terminal form is suited for automated assembly processes, ensuring high-quality production efficiency.

No. of Elements: 2

The two-element design allows for greater capacitance variability, offering improved performance for RF tuning applications.

Diode Element Material: SILICON

Utilizing silicon as the diode element material contributes to excellent temperature stability and reliable performance across a wide range of frequencies.

Minimum Diode Capacitance Ratio: 1.65

A minimum capacitance ratio of 1.65 indicates superior capacitance change capabilities, making it suitable for fine tuning in circuits.

Technical Specifications

Varactor Diodes BB804-1 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

1.65

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

16 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB804-1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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