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MV2101RLRM

Onsemi

MV2101RLRM by Onsemi

MV2101RLRM by Onsemi is a single varactor diode with a min quality factor of 450, nominal capacitance of 6.8 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.

Median Price

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< 1k

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Digiode

USA . 757 parts In-Stock

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Vyrian

USA . 239 parts In-Stock

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Problanco Electronics

Mexico . 4,425 parts In-Stock

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SupplyDigital Components

Austria . 3,285 parts In-Stock

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TANS Electronics

Latvia . 1,330 parts In-Stock

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Corphita

USA . 1,301 parts In-Stock

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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Kulean Microsystems

USA . 253 parts In-Stock

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Overview

Unlock a world of possibilities with the MV2101RLRM Varactor Diode by Onsemi. Crafted with premium quality materials and cutting-edge technology, this diode offers unparalleled performance and reliability. Ideal for a wide range of applications, from RF tuning to frequency modulation, this diode promises precision and efficiency. Experience seamless integration and superior functionality with the MV2101RLRM, delivering value and benefits that will elevate your projects to new heights. Choose Onsemi for excellence in innovation and engineering.

Feature Benefit Bullets

Minimum Quality Factor: 450

A high quality factor indicates good frequency stability and minimal loss, making this varactor diode suitable for high-performance applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and thermal properties, ensuring durability and reliability.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Package Shape: ROUND

The round shape allows for easier mounting and alignment in circuit layouts.

No. of Terminals: 2

Having only 2 terminals simplifies connections and enables straightforward integration into circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is commonly used and compatible with standard mounting techniques.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand high-temperature environments without performance degradation.

Terminal Finish: TIN LEAD

The tin lead finish provides good conductivity and solderability for secure and reliable connections.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and soldering.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation capability ensures reliable operation under high power conditions.

Nominal Diode Capacitance: 6.8 pF

The nominal capacitance value is suitable for a wide range of frequency tuning applications.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage provides protection against voltage surges and ensures reliability in high voltage circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for voltage-controlled tuning in RF and microwave circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form is easy to solder and secure during PCB assembly.

Diode Cap Tolerance: 10 %

The 10% capacitance tolerance allows for precise tuning and consistent performance in various operating conditions.

Diode Element Material: SILICON

Silicon diode elements offer high performance and reliability in electronic circuits.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio of 2.5 provides a wide tuning range for frequency modulation applications.

Technical Specifications

Varactor Diodes MV2101RLRM attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2101RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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