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MC209RLRA

Onsemi

MC209RLRA by Onsemi

MC209RLRA by Onsemi is a single varactor diode with 29pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for very high frequency applications due to its variable capacitance nature and cylindrical package style.

Median Price

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1k+

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Digiode

USA . 1,208 parts In-Stock

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Vyrian

USA . 462 parts In-Stock

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Kulean Microsystems

USA . 7,075 parts In-Stock

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Problanco Electronics

Mexico . 4,353 parts In-Stock

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SupplyDigital Components

Austria . 3,309 parts In-Stock

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Corphita

USA . 1,821 parts In-Stock

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TANS Electronics

Latvia . 1,607 parts In-Stock

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Corohmni

South Africa . 369 parts In-Stock

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UHIMA Technologies

Türkiye . 38 parts In-Stock

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Overview

Experience superior quality and reliability with the Onsemi MC209RLRA varactor diode. Manufactured by industry leader Onsemi, this diode offers exceptional performance in very high frequency applications. With a minimum quality factor of 200 and a nominal diode capacitance of 29pF, this diode provides excellent value and benefits to customers looking for precision and efficiency. Trust Onsemi to deliver cutting-edge technology and innovation in every component, ensuring that your projects are always ahead of the curve.

Feature Benefit Bullets

Minimum Quality Factor: 200

This high quality factor ensures efficient performance and minimal signal loss, making this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight, durable, and resistant to environmental factors, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies circuit design and integration, making it easier to incorporate this varactor diode into electronic systems.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is ideal for use in high-speed communication systems and radar systems.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making installation and maintenance convenient for the user.

No. of Terminals: 3

With three terminals, this varactor diode offers flexibility in connection options and can be easily integrated into various circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is space-saving and provides efficient heat dissipation, ensuring the diode operates within optimal temperature ranges.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good solderability and conductivity, ensuring reliable connections for stable performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and ensures a secure connection, enhancing the overall reliability of the diode in the circuit.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this varactor diode can handle high power levels without compromising its performance or longevity.

Nominal Diode Capacitance: 29 pF

The nominal diode capacitance of 29 pF offers precise tuning capabilities, allowing for fine adjustments in frequency and signal modulation.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V provides protection against voltage spikes and ensures the diode remains stable and reliable under varying operating conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it versatile for tuning circuits and frequency modulation applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy soldering and PCB mounting, providing a secure and stable connection in the circuit.

Diode Cap Tolerance: 10.34%

The diode capacitance tolerance of 10.34% ensures consistent performance and accuracy in tuning applications, reducing the risk of frequency drift or signal interference.

Diode Element Material: SILICON

Made of silicon, the diode element material offers high reliability, temperature stability, and low leakage currents, ensuring long-term performance and durability.

Minimum Diode Capacitance Ratio: 5

The minimum diode capacitance ratio of 5 provides a wide range of capacitance values for tuning applications, offering flexibility in circuit design and frequency modulation.

Technical Specifications

Varactor Diodes MC209RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MC209RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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