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MMBV2108L

Onsemi

MMBV2108L by Onsemi

MMBV2108L by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,507 parts In-Stock

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Digiode

USA . 692 parts In-Stock

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692

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TANS Electronics

Latvia . 6,478 parts In-Stock

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6,478

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Kulean Microsystems

USA . 3,516 parts In-Stock

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SupplyDigital Components

Austria . 2,600 parts In-Stock

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Problanco Electronics

Mexico . 2,584 parts In-Stock

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Corphita

USA . 2,325 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MMBV2108L Varactor Diode by Onsemi. With a minimum quality factor of 300 and a nominal diode capacitance of 27 pF, this high-quality component offers superior performance in frequency tuning applications. The small outline package shape makes it perfect for space-constrained designs, while the gull wing terminal form ensures easy installation. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and experience the benefits of precision engineering in every circuit with the MMBV2108L Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 300

High quality factor ensures efficient performance and signal integrity, making this varactor diode a reliable choice for electronic applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight, durable, and resistant to environmental factors, ideal for various electronic devices.

Config: SINGLE

The single configuration simplifies the design and implementation of the diode in electronic circuits, enhancing ease of use and integration.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, maximizing space utilization and enabling dense circuit layouts.

No. of Terminals: 3

Having 3 terminals offers flexibility in circuit connections and configurations, catering to a range of application requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compatibility with various PCB designs and layouts, contributing to versatility in usage.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and reliable electrical connections, enhancing the overall performance and durability of the diode.

Terminal Position: DUAL

Dual terminal position provides multiple options for connecting the diode in circuits, enhancing design flexibility and ease of installation.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation capability, this diode can handle higher power levels without compromising performance or reliability.

Nominal Diode Capacitance: 27 pF

The nominal capacitance value is ideal for tuning and filtering applications, offering precision control over the capacitance in electronic circuits.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures reliable operation and protection against voltage spikes, increasing the diode's overall durability.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it suitable for frequency tuning and voltage-controlled oscillator applications.

Terminal Form: GULL WING

The gull wing terminal form provides ease of handling and soldering during assembly, enhancing the overall manufacturing process efficiency.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this diode can handle reverse voltage stresses effectively, ensuring long-term reliability.

Diode Cap Tolerance: 10 %

The 10% diode capacitance tolerance allows for precise control and adjustment of capacitance values, enabling accurate circuit performance and tuning.

Diode Element Material: SILICON

Silicon diode element material offers high performance, temperature stability, and reliability, making this varactor diode a dependable choice for various electronic applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 indicates a wide tuning range and precise control over capacitance values, suitable for frequency tuning and modulation applications.

Technical Specifications

Varactor Diodes MMBV2108L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV2108L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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