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MMBV2103L

Onsemi

MMBV2103L by Onsemi

MMBV2103L by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 10 pF, and breakdown voltage of 30 V. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

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Digiode

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Electronic Expediters

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TANS Electronics

Latvia . 6,979 parts In-Stock

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Problanco Electronics

Mexico . 6,976 parts In-Stock

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SupplyDigital Components

Austria . 6,158 parts In-Stock

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Kulean Microsystems

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Corphita

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Corohmni

South Africa . 379 parts In-Stock

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UHIMA Technologies

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Overview

Unlock a world of limitless possibilities with the MMBV2103L Varactor Diode by Onsemi. Crafted with precision and quality in mind, this single-configured diode offers a minimum Quality Factor of 400, ensuring exceptional performance in a variety of applications. From tuning circuits to voltage-controlled oscillators, this small outline diode delivers reliable results with its 10 pF nominal capacitance and 30 V breakdown voltage. Elevate your projects with the superior value and benefits that Onsemi brings to the table, setting new standards in the industry.

Feature Benefit Bullets

Minimum Quality Factor: 400

Higher quality factor ensures lower losses and better performance in RF applications.

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components while keeping the overall weight of the product low.

Surface Mount: YES

Ease of installation and compact design make it suitable for modern circuit board designs.

Maximum Operating Temperature: 150 °C

Can handle high temperature environments without degradation in performance.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for secure connections.

Nominal Diode Capacitance: 10 pF

The specified capacitance value ensures accurate tuning and frequency control in RF circuits.

Minimum Breakdown Voltage: 30 V

Provides a safety margin for voltage spikes or transients in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for adjustable capacitance which is useful in frequency tuning applications.

Diode Element Material: SILICON

Silicon is a common and reliable material choice for diodes, ensuring stable performance.

Minimum Diode Capacitance Ratio: 2.5

With a high capacitance ratio, this diode can provide a wide range of tuning options in circuits.

Technical Specifications

Varactor Diodes MMBV2103L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

10 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV2103L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-374-8493, 5961013748493

NIIN

013748493

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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