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BB809-TAPE-REEL

NXP Semiconductors

BB809-TAPE-REEL by NXP Semiconductors

BB809-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case ensures reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,226 parts In-Stock

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Digiode

USA . 1,884 parts In-Stock

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Anansix

USA . 616 parts In-Stock

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616

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One Stop Electronics

USA . 1,334 parts In-Stock

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$1.010

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$1.010

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Native Components

USA . 479 parts In-Stock

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$54.865

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$52.670

479

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$52.670

Northwest PG Solutions

USA . 1,528 parts In-Stock

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$60.352

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1,528

$60.352

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Corphita

USA . 2,014 parts In-Stock

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2,014

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UNI Independent Distributors

Spain . 170 parts In-Stock

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Overview

Unlock the potential of your designs with the BB809-TAPE-REEL from NXP Semiconductors, a leading name in innovation. This high-quality varactor diode delivers exceptional performance in very high-frequency applications, making it ideal for tuned circuits and RF technologies. Enjoy reliable operation with minimal reverse current and impressive capacitance. Elevate your projects with unparalleled precision and efficiency, ensuring you stay ahead in today’s competitive market!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides excellent thermal stability and protects the internal components, ensuring reliable performance in various operating conditions.

Config: SINGLE

A single configuration simplifies circuit design while offering a dedicated solution for applications requiring specific capacitance adjustments.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is suitable for RF and microwave circuits, making it ideal for communication systems and radar technologies.

Maximum Reverse Current: 0.01 uA

The extremely low maximum reverse current indicates minimal leakage, which enhances the diode's efficiency and reliability in precision applications.

Package Shape: ROUND

The round package shape facilitates easy integration into various circuit designs and enhances thermal dissipation.

Reverse Test Voltage: 28 V

A reverse test voltage of 28 V allows the diode to withstand significant reverse biases, ensuring robustness in demanding applications.

No. of Terminals: 2

With only 2 terminals, the simple design aids in straightforward installation and connectivity in most circuit configurations.

Package Style (Meter): LONG FORM

The long form package style provides flexibility in layout and integrates efficiently into various PCB designs.

Maximum Operating Temperature: 100 °C

A high maximum operating temperature indicates the diode can function reliably in high-temperature environments, making it suitable for industrial applications.

Terminal Position: AXIAL

Axial terminal positioning allows for easy mounting in PCB layouts, enhancing the design versatility of the diode.

Case Connection: ISOLATED

Isolated case connections minimize the risk of short circuits and enable safer operation in sensitive applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures the diode operates safely under higher voltage conditions, which is crucial for durability.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this component allows for tuning and adjusting capacitance in circuits, making it essential for frequency modulation and signal processing.

Terminal Form: WIRE

Wire terminal form provides robust connections and facilitates easy soldering during the assembly process.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical characteristics, making the diode efficient and reliable for a range of electronic applications.

Minimum Diode Capacitance Ratio: 8

A minimum capacitance ratio of 8 allows for significant variability in capacitance, making this diode highly effective for tuning applications across different frequencies.

Technical Specifications

Varactor Diodes BB809-TAPE-REEL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

8

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB809-TAPE-REEL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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