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LV2209RLRE

Onsemi

LV2209RLRE by Onsemi

LV2209RLRE by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25 V. It is used in applications requiring variable capacitance control, such as tuning circuits in RF communication systems. Operating temperature up to 150 °C makes it suitable for high-temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,462 parts In-Stock

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Digiode

USA . 66 parts In-Stock

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TANS Electronics

Latvia . 7,046 parts In-Stock

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SupplyDigital Components

Austria . 5,346 parts In-Stock

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Problanco Electronics

Mexico . 5,029 parts In-Stock

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Kulean Microsystems

USA . 3,589 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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Corphita

USA . 257 parts In-Stock

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UHIMA Technologies

Türkiye . 19 parts In-Stock

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Overview

Unlock endless possibilities with the LV2209RLRE varactor diode by Onsemi. Known for their superior quality and reliability, Onsemi brings you a top-of-the-line product that is perfect for a wide range of applications. Whether you're in the telecommunications, aerospace, or consumer electronics industry, this diode offers unmatched performance and efficiency. Say goodbye to subpar products and hello to the value and benefits that the LV2209RLRE brings to your projects. Elevate your designs with Onsemi today!

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor ensures efficient and reliable performance in RF applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the varactor diode lightweight and durable.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the varactor diode easy to integrate.

Package Shape: ROUND

Round package shape allows for easy installation and mounting in various electronic devices.

Number of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers good mechanical stability and ease of handling during installation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand harsh environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB layout and efficient heat dissipation.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation capability ensures the varactor diode can handle high power levels without failure.

Nominal Diode Capacitance: 33 pF

With a moderate nominal capacitance, this varactor diode offers flexibility in tuning applications.

Minimum Breakdown Voltage: 25 V

A high minimum breakdown voltage ensures reliable operation and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product allows for precise tuning of electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form facilitates easy and secure mounting on a PCB.

Diode Capacitance Tolerance: 10 %

A 10% tolerance in diode capacitance allows for tighter control over circuit performance and tuning accuracy.

Diode Element Material: SILICON

Silicon diode element material offers good stability and performance in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

A minimum diode capacitance ratio of 2.5 provides a wide tuning range for frequency modulation applications.

Technical Specifications

Varactor Diodes LV2209RLRE attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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