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LV2209RLRP

Onsemi

LV2209RLRP by Onsemi

LV2209RLRP by Onsemi is a single varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic devices.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,244 parts In-Stock

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Vyrian

USA . 1,349 parts In-Stock

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SupplyDigital Components

Austria . 7,039 parts In-Stock

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Problanco Electronics

Mexico . 6,119 parts In-Stock

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TANS Electronics

Latvia . 6,003 parts In-Stock

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Kulean Microsystems

USA . 2,317 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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Overview

Enhance your electronic designs with the LV2209RLRP Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. This diode offers a minimum quality factor of 200, making it perfect for applications that require precise tuning and frequency control. With a nominal capacitance of 33pF and a breakdown voltage of 25V, this diode provides exceptional performance. Whether you're working on RF amplifiers, oscillators, or frequency modulators, the LV2209RLRP will deliver unmatched value and benefits to meet your design needs. Trust Onsemi for top-notch components that elevate your projects to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor means better overall performance and stability in high-frequency applications.

Package Body Material: PLASTIC/EPOXY

This material combination provides good durability while keeping the overall weight of the product low.

Config: SINGLE

Single configuration makes it easy to integrate into circuits and simplifies the overall design.

Package Shape: ROUND

Round shape helps in uniform distribution of stress and allows for easier handling during installation.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor and efficient use of space in electronic circuits.

Maximum Operating Temperature: 150 °C

Higher operating temperature range allows for use in a wide range of environments without compromising performance.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount the diode on PCBs and facilitates a cleaner layout.

Maximum Power Dissipation: 0.28 W

Decent power handling capability makes this diode suitable for various RF and microwave applications.

Nominal Diode Capacitance: 33 pF

Optimal capacitance value for frequency tuning and filtering applications in electronic circuits.

Minimum Breakdown Voltage: 25 V

Higher breakdown voltage ensures better protection against voltage surges and spikes in circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance allows for precise tuning in RF circuits for improved performance and signal control.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and easy soldering for secure mounting on PCBs.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance ensures consistent performance and predictable behavior in electronic circuits.

Diode Element Material: SILICON

Silicon material offers stable and reliable performance over a wide temperature range for long-lasting use.

Minimum Diode Capacitance Ratio: 2.5

Higher capacitance ratio provides greater flexibility in tuning frequency responses in RF circuits.

Technical Specifications

Varactor Diodes LV2209RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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