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LV2205RLRP

Onsemi

LV2205RLRP by Onsemi

LV2205RLRP by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for RF tuning applications due to its variable capacitance and high-quality factor performance at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,358 parts In-Stock

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Vyrian

USA . 68 parts In-Stock

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TANS Electronics

Latvia . 8,332 parts In-Stock

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SupplyDigital Components

Austria . 7,664 parts In-Stock

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Problanco Electronics

Mexico . 6,138 parts In-Stock

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Kulean Microsystems

USA . 5,573 parts In-Stock

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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Corohmni

South Africa . 401 parts In-Stock

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Corphita

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Overview

Upgrade your electronic devices with the high-quality LV2205RLRP Varactor Diode by Onsemi. With a minimum quality factor of 400 and a maximum operating temperature of 150 °C, this diode ensures optimal performance in various applications. The single configuration, round package style, and through-hole terminal form make it easy to integrate into your designs. Trust in Onsemi's reputation for excellence in semiconductor manufacturing when choosing the LV2205RLRP for your projects. Experience the value and benefits of this variable capacitance diode, offering superior functionality and reliability for your electronic needs.

Feature Benefit Bullets

Minimum Quality Factor: 400

Higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for applications requiring high quality signals.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides excellent protection for the diode, ensuring durability and longevity in various environments.

Config: SINGLE

Single configuration simplifies installation and usage, making it easy to integrate this varactor diode into circuits.

Package Shape: ROUND

Round package shape allows for easy handling and placement within circuit designs, optimizing space utilization.

No. of Terminals: 2

Having two terminals simplifies the connections and ensures a secure fit within the circuit, enhancing overall performance.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy compatibility with standard mounting methods, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand heat stress, making it suitable for demanding environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, facilitating secure connections and reliable performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB assembly and placement, offering ease of integration into circuit designs.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation allows the varactor diode to handle power efficiently, preventing overheating and ensuring continuous operation.

Nominal Diode Capacitance: 15 pF

Optimal diode capacitance value offers precise control over capacitance, enhancing the performance of frequency tuning and signal modulation.

Minimum Breakdown Voltage: 25 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads, enhancing the reliability and longevity of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for adjustable capacitance values, offering flexibility in signal processing and frequency tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables easy and secure PCB mounting, ensuring stability and reliability in circuit connections.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance of 10% ensures consistent performance and accuracy in signal modulation and frequency control applications.

Diode Element Material: SILICON

Silicon diode element material provides stable and reliable performance, making this varactor diode suitable for various electronic applications.

Minimum Diode Capacitance Ratio: 2.5

High minimum capacitance ratio of 2.5 indicates a wide range of capacitance control, offering versatility in tuning and adjusting signal frequencies.

Technical Specifications

Varactor Diodes LV2205RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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