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BB149,135

NXP Semiconductors

BB149,135 by NXP Semiconductors

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,557 parts In-Stock

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Digiode

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Anansix

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One Stop Electronics

USA . 753 parts In-Stock

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$0.010

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AZTECH Wire

Italy . 636 parts In-Stock

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$21.900

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Native Components

USA . 842 parts In-Stock

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Component Stockers USA

USA . 394 parts In-Stock

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$99.990

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Northwest PG Solutions

USA . 1,043 parts In-Stock

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Corphita

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UNI Independent Distributors

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Microchip USA

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Overview

Unlock unparalleled performance with the BB149,135 Varactor Diode from NXP Semiconductors. Renowned for their quality and reliability, NXP ensures that each component meets high standards to enhance your designs in ultra-high frequency applications like RF circuits and tuning systems. Enjoy exceptional flexibility, compact size, and robust temperature stability, providing you with a competitive edge and peace of mind as you bring innovative solutions to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and integration into existing systems, providing ease of use.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra-high frequency applications, this diode can effectively function in RF communication, contributing to better performance in high-speed circuits.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly, making it a great choice for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, enabling better layout flexibility and maximizing efficiency in component placement.

No. of Terminals: 2

Two terminals provide a straightforward connection, which can simplify design and reduce potential points of failure in a circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style takes up less board space, making it ideal for compact electronic designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature range ensures reliability and performance in demanding applications without failure.

Minimum Operating Temperature: -55 °C

The wide operating temperature range allows the diode to function effectively in extreme conditions, increasing its versatility.

Terminal Finish: TIN

Tin terminal finish enhances solderability and reduces oxidation, ensuring reliable connections in assembled circuits.

Terminal Position: DUAL

Dual terminal positioning aids in easier assembly and better alignment on the PCB, minimizing assembly errors.

Nominal Diode Capacitance: 18.75 pF

A nominal capacitance of 18.75 pF allows for effective tuning and modulation, making it suitable for RF applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it enables precise control of capacitance in RF circuits, supporting various tuning applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve reliability, particularly in high-density applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum repetitive peak reverse voltage of 30 V ensures the diode can withstand varying electrical conditions without failing.

Diode Cap Tolerance: 4 %

With a tolerance of 4%, it offers reliable performance with acceptable variances, ensuring consistent capacitance values in critical applications.

Diode Element Material: SILICON

Silicon as the elemental material enhances performance characteristics, such as low leakage current and stability over a wide temperature range.

Minimum Diode Capacitance Ratio: 8.2

A minimum capacitance ratio of 8.2 indicates good variable capacitance performance, making it highly suitable for tuning applications.

Technical Specifications

Varactor Diodes BB149,135 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Cap Tolerance:

4 %

Minimum Diode Capacitance Ratio:

8.2

Nominal Diode Capacitance:

18.75 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BB149,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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