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MV2105RL

Onsemi

MV2105RL by Onsemi

MV2105RL by Onsemi is a single varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 30 V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,454 parts In-Stock

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Vyrian

USA . 135 parts In-Stock

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Kulean Microsystems

USA . 7,189 parts In-Stock

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Problanco Electronics

Mexico . 5,391 parts In-Stock

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TANS Electronics

Latvia . 4,791 parts In-Stock

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SupplyDigital Components

Austria . 1,330 parts In-Stock

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Corphita

USA . 917 parts In-Stock

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Corohmni

South Africa . 184 parts In-Stock

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UHIMA Technologies

Türkiye . 45 parts In-Stock

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Overview

Experience the superior quality and reliability of the MV2105RL Varactor Diode by Onsemi. With a minimum quality factor of 400, this diode offers exceptional performance in a variety of applications. Whether you're looking to improve signal tuning in RF circuits or enhance frequency multiplier designs, the MV2105RL delivers the value and benefits you need. Trust in Onsemi's reputation for excellence in semiconductor manufacturing as you explore the advantages of this high-quality varactor diode.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures better performance and stability in applications requiring low noise and high precision.

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, making it durable and long-lasting.

Config: SINGLE

Single configuration simplifies circuit design and installation, reducing complexity and cost.

Package Shape: ROUND

Round shape enables easy mounting and handling, making the diode suitable for various applications.

No. of Terminals: 2

Two terminals provide a simple connection interface, making it easy to integrate the diode into different circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact and space-saving design, ideal for applications with limited space.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to withstand elevated temperatures, improving reliability under harsh conditions.

Terminal Finish: TIN LEAD

Tin Lead terminal finish offers good solderability and conductivity, ensuring reliable connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering, enhancing the ease of assembly.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation rating allows the diode to handle higher power levels without damage, increasing its versatility.

Nominal Diode Capacitance: 15 pF

Low nominal capacitance enables fast response times and high frequency operation, making the diode suitable for RF and microwave applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures protection against voltage spikes and surges, enhancing the diode's durability and reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers adjustable capacitance for voltage-controlled applications, adding flexibility to the circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections, reducing the risk of solder joint failure in demanding environments.

Diode Cap Tolerance: 10 %

10% capacitance tolerance ensures consistent performance and precision in circuit designs requiring accurate capacitance values.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and stability, making the diode suitable for a wide range of applications.

Minimum Diode Capacitance Ratio: 2.5

High minimum capacitance ratio provides a wide range of capacitance adjustment, offering flexibility in tuning the diode for different applications.

Technical Specifications

Varactor Diodes MV2105RL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2105RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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