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SVC272

Onsemi

SVC272 by Onsemi

The Onsemi SVC272 is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 150 and operates in the very high frequency band. Ideal for applications requiring variable capacitance diodes with abrupt classification, such as RF tuning circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 1,530 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 3,887 parts In-Stock

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TANS Electronics

Latvia . 3,360 parts In-Stock

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SupplyDigital Components

Austria . 2,906 parts In-Stock

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Corphita

USA . 2,298 parts In-Stock

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Kulean Microsystems

USA . 881 parts In-Stock

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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Corohmni

South Africa . 89 parts In-Stock

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Overview

Discover the SVC272 by Onsemi, a high-quality Varactor Diode that offers unparalleled performance and reliability. With a minimum Quality Factor of 150 and a Variable Capacitance Diode Classification of ABRUPT, this diode is perfect for applications in the VERY HIGH FREQUENCY band. Its COMMON CATHODE configuration and 2 ELEMENT design make it versatile for various projects. Experience the benefits of precise capacitance control and low reverse current with the SVC272. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and get ready to elevate your electronics with this top-of-the-line diode.

Feature Benefit Bullets

Minimum Quality Factor: 150

Higher quality factor indicates better performance and efficiency in handling signals, making this varactor diode a reliable choice for electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes provide sharp changes in capacitance, making them suitable for frequency control and tuning applications.

Maximum Reverse Current: 0.05 uA

Low reverse current ensures minimal power loss and improved signal integrity, making this varactor diode efficient in applications requiring low leakage current.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is ideal for RF and microwave circuits where fast signal processing is necessary.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this varactor diode can withstand higher temperatures, making it suitable for applications that require stable performance under varying thermal conditions.

Technical Specifications

Varactor Diodes SVC272 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

14 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

5.18 %

Minimum Diode Capacitance Ratio:

2.3

Nominal Diode Capacitance:

47.365 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Minimum Quality Factor:

150

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

SVC272 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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