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SVC203SPA

Onsemi

SVC203SPA by Onsemi

SVC203SPA by Onsemi is a Varactor Diode with 2 elements, common cathode config, and min quality factor of 60. It has a diode capacitance ratio of 2.1924, breakdown voltage of 16V, and max power dissipation of 0.1W. Ideal for applications requiring variable capacitance diodes in plastic/epoxy package style with through-hole terminals.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 180,999 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

180,999

-

$0.066

$0.055

$0.049

DigiKey

USA . 180,999 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.080

180,999

-

-

-

$0.080

Verical

USA . 180,999 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

180,999

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,995 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

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1,995

$0.051

-

-

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Vyrian

USA . 1,961 parts In-Stock

1+ parts

$0.054

100+ parts

-

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1,961

$0.054

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-

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Prism Electronics

USA . 20 parts In-Stock

1+ parts

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20

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Distributors (Availability)

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Corphita

USA . 2,266 parts In-Stock

1+ parts

$0.049

100+ parts

-

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2,266

$0.049

-

-

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Corohmni

South Africa . 365 parts In-Stock

1+ parts

$0.054

100+ parts

-

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365

$0.054

-

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Continental Prestige Electronics

USA . 180,999 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.047

10k+ parts

-

180,999

-

-

$0.047

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Metaverse IC Inc.

Canada . 45,600 parts In-Stock

1+ parts

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45,600

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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QUARKTWIN TECHNOLOGY LTD

USA . 21,319 parts In-Stock

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21,319

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Kepictronics

USA . 8,880 parts In-Stock

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8,880

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Problanco Electronics

Mexico . 3,356 parts In-Stock

1+ parts

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3,356

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TANS Electronics

Latvia . 1,276 parts In-Stock

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1,276

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Kulean Microsystems

USA . 1,162 parts In-Stock

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1,162

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SupplyDigital Components

Austria . 942 parts In-Stock

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942

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UHIMA Technologies

Türkiye . 827 parts In-Stock

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827

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Perfect Parts

USA . 22 parts In-Stock

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22

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Overview

Upgrade your electronic projects with the SVC203SPA Varactor Diode by Onsemi, a top-tier manufacturer known for quality and reliability. This common cathode diode offers a minimum quality factor of 60, making it perfect for applications requiring precise control over variable capacitance. With a package body material of plastic/epoxy and a maximum power dissipation of 0.1W, this diode is designed to deliver outstanding performance while ensuring longevity. Elevate your designs with the superior value and benefits that the SVC203SPA Varactor Diode brings to the table.

Feature Benefit Bullets

Minimum Quality Factor: 60

A high minimum quality factor indicates better performance and efficiency in terms of signal frequency tuning and control.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability, thermal stability, and resistance to environmental factors, making the product reliable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient voltage control and signal modulation, enhancing the overall functionality of the product.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration and installation of the varactor diodes in electronic circuits, providing convenience and space-saving benefits.

No. of Terminals: 3

Having 3 terminals enables better connectivity and compatibility with external devices or circuit components, promoting versatility and flexibility in usage.

Package Style (Meter): IN-LINE

The in-line package style simplifies the assembly process and PCB layout, ensuring compatibility with standard meter equipment and enhancing overall usability.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple terminal finishes (tin/copper/silver/nickel) provides corrosion resistance, conductivity, and solderability, ensuring stable and reliable connections for optimal performance.

Terminal Position: SINGLE

Having a single terminal position simplifies the wiring and connection process, reducing the risk of errors and enhancing the overall ease of use of the varactor diodes.

Maximum Power Dissipation: 0.1 W

With a maximum power dissipation of 0.1 W, the varactor diodes can handle power efficiently, ensuring stable operation and protection against overheating or damage.

Minimum Breakdown Voltage: 16 V

The minimum breakdown voltage of 16 V provides ample protection against voltage surges or spikes, ensuring the reliability and longevity of the varactor diodes in various operating conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers precise and adjustable capacitance levels, allowing for fine-tuning of electronic circuits and better control over signal frequencies.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering process and enhances the mechanical stability of the varactor diodes, ensuring secure and durable connections in electronic circuits.

No. of Elements: 2

Having 2 elements enhances the diode's functionality and versatility, enabling more complex circuit designs and signal modulation capabilities for diverse applications.

Diode Cap Tolerance: 7.64 %

The diode capacitance tolerance of 7.64% ensures consistent and accurate capacitance values, promoting reliable performance and precise control over signal frequencies in electronic circuits.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides high conductivity, thermal stability, and durability, making the varactor diodes suitable for a wide range of applications and operating conditions.

Minimum Diode Capacitance Ratio: 2.1924

The minimum diode capacitance ratio of 2.1924 allows for a wide range of capacitance adjustments, offering flexibility and accuracy in signal tuning and modulation for optimal circuit performance.

Technical Specifications

Varactor Diodes SVC203SPA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

7.64 %

Minimum Diode Capacitance Ratio:

2.1924

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Power Dissipation:

.1 W

Qualification:

Not Qualified

Minimum Quality Factor:

60

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

Terminal Position:

Trade Compliance

SVC203SPA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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