Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
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Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
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I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
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RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MMBV432LT1 by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications requiring abrupt variable capacitance diodes in small outline packages.
Median Price
$0.626
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Suppliers In-Stock
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1k+
Freelance Electronics
1+ parts
100+ parts
$0.657
1k+ parts
$0.620
10k+ parts
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Eagle Technology Solutions
PC Components Company LLC
Bristol Electronics
Electronics Depot
J & M Industries LLC
Q Components
Digiode
Lighthouse Electronics, Inc.
Semi Source
Vyrian
Corohmni
Authorized Procurement Solutions
TANS Electronics
Problanco Electronics
Assy Fe
Kulean Microsystems
Kepictronics
Corphita
SupplyDigital Components
UHIMA Technologies
A minimum quality factor of 100 indicates high efficiency and performance, making this varactor diode a reliable choice for high frequency applications.
The plastic/epoxy package body material provides durability and protection, ensuring the varactor diode is well-suited for a wide range of environmental conditions.
The common cathode configuration with 2 elements allows for flexible circuit design and efficient operation in various electronic applications.
The abrupt variable capacitance diode classification enables precise and rapid capacitance changes, making it ideal for frequency tuning and modulation circuits.
Designed for very high frequency operations, this varactor diode ensures reliable performance in advanced communication systems and radar applications.
Being surface mountable simplifies the assembly process and allows for compact designs, making it suitable for modern electronic devices with limited space.
The rectangular package shape offers ease of handling and efficient placement on circuit boards, contributing to streamlined production processes.
With 3 terminals, this varactor diode provides versatile connectivity options and allows for easy integration into a variety of circuit configurations.
The small outline package style enhances space utilization, making it suitable for compact electronic devices and reducing overall system footprint.
The tin/lead terminal finish ensures reliable soldering connections, improving overall electrical performance and maintaining signal integrity.
The dual terminal position allows for secure attachment and stable connections, facilitating efficient signal transmission and minimizing signal loss.
With a maximum power dissipation of 0.225 W, this varactor diode can handle high power levels without compromising its performance or reliability.
The nominal diode capacitance of 45.55 pF provides precise tuning capabilities and stable operation, making it suitable for frequency control applications.
The minimum breakdown voltage of 14 V ensures protection against voltage spikes and overloads, enhancing the overall durability and reliability of the diode.
The maximum time at peak reflow temperature of 30 seconds allows for efficient soldering processes and ensures the diode's integrity during assembly.
The peak reflow temperature of 235 °C enables reliable soldering connections and ensures the diode's performance under varying temperature conditions.
As a variable capacitance diode, this product offers precise control over capacitance values, making it ideal for frequency tuning and signal modulation applications.
The gull wing terminal form provides secure mounting and reliable electrical connections, promoting efficient signal transmission and minimizing signal distortion.
With 2 elements, this varactor diode offers enhanced functionality and flexibility in circuit design, allowing for customized applications and improved performance.
The maximum repetitive peak reverse voltage of 14 V ensures reliable operation and protection against reverse voltage conditions, enhancing the diode's durability.
The diode capacitance tolerance of 5.6% provides consistent performance and accurate tuning capabilities, making it suitable for precision electronic applications.
Constructed with silicon diode element material, this varactor diode offers high temperature stability and reliable performance, ensuring long-term functionality in demanding environments.
The minimum diode capacitance ratio of 1.5 indicates a wide range of capacitance values, allowing for versatile tuning options and adaptable circuit configurations.
Varactor Diodes MMBV432LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi
Additional Features:
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JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
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Variable Capacitance Diode Classification:
MMBV432LT1 Diodes trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.10.00.80
SB
NSN
5961-01-414-9172, 5961014149172
NIIN
014149172
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Multicomp Pro
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
MS3V-T1R32.768KHZ+/-20PPM12.5PF
Golledge Electronics
MS3V-T1R32.768KHZ+/-20PPM12.5PF by Golledge Electronics is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 12.5 pF load capacitance. It is ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.
BSS138-7-F
Diodes Incorporated
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
LL4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
LM358AN
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
FDV303N
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Weitronic Enterprise
934050200335
NXP Semiconductors
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB241TRL
BB241TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 21, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.
BB179T/R
BB212-AMMOPAK
BB212-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 22.5 and comes in a cylindrical plastic/epoxy package, ideal for RF tuning applications. With its through-hole design and silicon material, it ensures reliable performance in various electronic circuits.
MMBV809LT3G
MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.
BB158-T
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2109RLRM
MV2109RLRM by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.
934067727115
VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
SVC342K
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Nominal Diode Capacitance: 439 pF; Maximum Repetitive Peak Reverse Voltage: 16 V;
MV1648
The Onsemi MV1648 is a single varactor diode with 82pF nominal capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.
BB149/A2,115
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 2.1 pF;
934053250335
MDX586N
Texas Instruments
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20; Nominal Diode Capacitance: .225 pF;
BB207
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB173
BB145,115
SMV1405-079LF
Skyworks Solutions
SMV1405-079LF by Skyworks Solutions is a varactor diode with 3200 min. quality factor, 2.1 pF nominal capacitance, and 30 V breakdown voltage. Ideal for S band applications due to its abrupt variable capacitance diode classification and small outline package style for surface mount usage.
1N5444
The Onsemi 1N5444 Varactor Diode has a Min Quality Factor of 400, Max Reverse Current of 0.02uA, and Nominal Diode Capacitance of 12pF. It is used in RF applications for tuning circuits due to its Variable Capacitance Diode Classification as ABRUPT.
BB911-AMMOPAK
BB911-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a min breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.
BB178,315
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;
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Supply Digital Components
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