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1N5467

Onsemi

1N5467 by Onsemi

1N5467 by Onsemi is a Varactor Diode with a Min Quality Factor of 500, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 20 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,702 parts In-Stock

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Digiode

USA . 1,182 parts In-Stock

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Native Components

USA . 320 parts In-Stock

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$6.401

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320

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TANS Electronics

Latvia . 7,121 parts In-Stock

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Problanco Electronics

Mexico . 3,060 parts In-Stock

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Kulean Microsystems

USA . 2,205 parts In-Stock

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Corphita

USA . 1,847 parts In-Stock

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Northwest PG Solutions

USA . 861 parts In-Stock

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Corohmni

South Africa . 495 parts In-Stock

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UHIMA Technologies

Türkiye . 370 parts In-Stock

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SupplyDigital Components

Austria . 242 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the 1N5467 Varactor Diode by Onsemi. Trusted for its high-quality manufacturing and reliable performance, this diode offers a wide range of applications in RF tuning circuits, voltage-controlled oscillators, and frequency multipliers. With a minimum quality factor of 500 and low reverse current, this diode ensures optimized performance and efficiency. Experience the value and benefits of the 1N5467, designed to meet your specific needs and exceed your expectations. Elevate your projects with Onsemi's superior technology and unlock endless possibilities.

Feature Benefit Bullets

Minimum Quality Factor: 500

High quality factor indicates better performance and reliability of the varactor diode.

Package Body Material: GLASS

Glass material provides good thermal conductivity and stability for the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer sharp and precise capacitance changes, suitable for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and better efficiency of the varactor diode.

Package Shape: ROUND

Round package shape allows for easy mounting and soldering of the varactor diode.

Reverse Test Voltage: 25 V

With a reverse test voltage of 25V, this varactor diode can handle a wide range of operating voltages.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and usage of the varactor diode in circuits.

Package Style (Meter): LONG FORM

Long form package style provides better heat dissipation and mechanical stability for the varactor diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and stability in various temperature conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the varactor diode to function in extreme cold environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and electrical connection for the varactor diode.

Terminal Position: AXIAL

Axial terminal position makes it easy to connect the varactor diode in circuits and on PCBs.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents any unwanted interference in the circuit.

Maximum Power Dissipation: 0.4 W

High power dissipation rating allows the varactor diode to handle higher power levels without overheating.

Nominal Diode Capacitance: 20 pF

Nominal capacitance of 20 pF makes this varactor diode suitable for various frequency tuning applications.

Minimum Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this varactor diode can handle higher voltage spikes without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers tunable capacitance for frequency modulation and tuning circuits.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection and installation of the varactor diode in circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage ensures the varactor diode can withstand voltage fluctuations without failure.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for variation in capacitance values while maintaining desired performance.

Diode Element Material: SILICON

Silicon diode element material offers good reliability and performance for the varactor diode.

Minimum Diode Capacitance Ratio: 2.9

Minimum capacitance ratio of 2.9 indicates a wide range of capacitance tuning for frequency modulation applications.

Technical Specifications

Varactor Diodes 1N5467 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

20 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5467 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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