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BBY40TRL

NXP Semiconductors

BBY40TRL by NXP Semiconductors

BBY40TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and signal processing tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,632 parts In-Stock

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Digiode

USA . 1,141 parts In-Stock

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Vyrian

USA . 57 parts In-Stock

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One Stop Electronics

USA . 272 parts In-Stock

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$3.010

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Corphita

USA . 3,687 parts In-Stock

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Northwest PG Solutions

USA . 1,841 parts In-Stock

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UNI Independent Distributors

Spain . 1,259 parts In-Stock

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Native Components

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Overview

Unlock the potential of your designs with the BBY40TRL varactor diode from NXP Semiconductors, a leader in innovative semiconductor solutions. This compact, high-frequency component enhances tunability and efficiency in applications ranging from RF signal processing to automatic tuning circuits. With its superior quality and reliable performance, the BBY40TRL ensures you stay ahead in technology, delivering unmatched value and design flexibility for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and protection against environmental factors, ensuring reliable performance in various applications.

Config: SINGLE

A single configuration simplifies design and integration, making it suitable for a wide range of electronic circuits.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is ideal for RF and microwave circuits, delivering excellent performance.

Surface Mount: YES

Surface mount capability allows for efficient assembly and reduces the overall footprint of the circuit, facilitating compact designs.

Package Shape: RECTANGULAR

The rectangular package shape enhances space efficiency on the PCB, providing flexibility during layout design.

No. of Terminals: 3

With three terminals, this diode allows for versatile connections and reliable electrical performance in various configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style optimizes space on the PCB, supporting high-density circuit designs.

Terminal Finish: Tin (Sn)

Tin terminal finish ensures good solderability and corrosion resistance, leading to increased reliability in assembly.

Terminal Position: DUAL

Dual terminal position facilitates easier routing on the PCB, making integration more straightforward in complex designs.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it provides adjustable capacitance, making it perfect for tuning circuits and voltage-controlled oscillators.

Terminal Form: GULL WING

Gull wing terminal form enhances mechanical stability and provides a larger contact area for soldering, resulting in better electrical connections.

Diode Element Material: SILICON

Silicon is a widely-used semiconductor material that offers excellent thermal and electrical properties, contributing to overall device performance.

Minimum Diode Capacitance Ratio: 8

A high minimum capacitance ratio allows for greater tuning range, essential for applications requiring precise frequency adjustments.

Technical Specifications

Varactor Diodes BBY40TRL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Minimum Diode Capacitance Ratio:

8

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

BBY40TRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-374-7150, 5961013747150

NIIN

013747150

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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