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MV2109RLRPG

Onsemi

MV2109RLRPG by Onsemi

MV2109RLRPG by Onsemi is a single varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,464 parts In-Stock

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Digiode

USA . 1,644 parts In-Stock

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1,644

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Kulean Microsystems

USA . 7,309 parts In-Stock

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7,309

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TANS Electronics

Latvia . 6,935 parts In-Stock

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SupplyDigital Components

Austria . 5,833 parts In-Stock

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Problanco Electronics

Mexico . 4,620 parts In-Stock

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Corphita

USA . 1,911 parts In-Stock

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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Overview

Enhance your high frequency to ultra-high frequency applications with the MV2109RLRPG Varactor Diode by Onsemi. Manufactured with top-tier quality materials and expertise, this single configuration diode offers a minimum quality factor of 200, ensuring reliable performance. Its variable capacitance and abrupt classification make it versatile for various electronic designs. With a nominal capacitance of 33 pF and a maximum power dissipation of 0.28 W, this diode provides exceptional value and benefits to customers looking for precision and efficiency in their circuit designs. Elevate your projects with the MV2109RLRPG Varactor Diode and experience superior performance like never before.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency in high frequency applications, making this varactor diode a reliable choice for high frequency to ultra high frequency bands.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body reduces the overall weight and cost of the diode while providing good mechanical strength and insulation, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the design and integration process, making it easy to use in various circuits and electronic systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer sharp changes in capacitance with voltage, allowing for precise tuning in high frequency circuits and applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Designed for high frequency to ultra high frequency bands, this varactor diode is suitable for advanced communication systems, radar, and other RF applications.

Package Shape: ROUND

The round package shape offers efficient PCB layout and space-saving advantages, making it easy to mount and integrate into circuit designs.

No. of Terminals: 2

With only 2 terminals, this varactor diode is easy to connect and use in different circuit configurations, simplifying the overall design process.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides good protection and thermal performance, ensuring reliability and stability in high frequency applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper ensures good conductivity, corrosion resistance, and solderability, enhancing the overall performance and reliability of the diode.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and connection on the PCB, offering convenience and flexibility in circuit assembly.

Maximum Power Dissipation: 0.28 W

With a maximum power dissipation of 0.28 W, this varactor diode can handle high power levels without overheating, ensuring long-term reliability in demanding applications.

Nominal Diode Capacitance: 33 pF

The nominal capacitance value of 33 pF allows for precise tuning and adjustment in RF circuits, making it ideal for frequency-modulated systems and communication equipment.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures protection against overvoltage conditions, enhancing the reliability and lifespan of the varactor diode in high power applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this varactor diode can withstand high-temperature soldering processes, ensuring proper mechanical and electrical connections during assembly.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels for frequency tuning and modulation in RF circuits, making it versatile and adaptable to different applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure mounting on PCBs, providing mechanical stability and reliability in various electronic systems.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30 V offers protection against reverse voltage spikes and ensures safe operation in high frequency and RF circuits.

Diode Cap Tolerance: 10 %

The 10% capacitance tolerance allows for fine-tuning and adjustment in circuit design, ensuring accurate performance and consistency in RF applications.

Diode Element Material: SILICON

Made from silicon, the diode element material provides good electrical properties, temperature stability, and reliability, making it suitable for high frequency and RF applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio of 2.5 indicates the range of capacitance variation in the diode, offering flexibility and precision in frequency tuning and modulation applications.

Technical Specifications

Varactor Diodes MV2109RLRPG attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2109RLRPG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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