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MV2109RLRA

Onsemi

MV2109RLRA by Onsemi

MV2109RLRA by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

2,000

-

$0.172

$0.143

$0.127

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.210

2,000

-

-

-

$0.210

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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$0.159

2,000

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$0.159

Distributors (In-Stock)

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Digiode

USA . 2,365 parts In-Stock

1+ parts

$0.134

100+ parts

-

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2,365

$0.134

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Vyrian

USA . 575 parts In-Stock

1+ parts

$0.141

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575

$0.141

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DigiKey Marketplace

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Pegasus Components GmbH

Germany . 2,000 parts In-Stock

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2,000

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PC Components Company LLC

USA . 1,605 parts In-Stock

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1,605

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Bristol Electronics

USA . 1,605 parts In-Stock

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1,605

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,660 parts In-Stock

1+ parts

$0.127

100+ parts

-

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1,660

$0.127

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Corohmni

South Africa . 429 parts In-Stock

1+ parts

$0.141

100+ parts

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429

$0.141

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QUARKTWIN TECHNOLOGY LTD

USA . 13,389 parts In-Stock

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13,389

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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TANS Electronics

Latvia . 8,064 parts In-Stock

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8,064

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Kulean Microsystems

USA . 6,813 parts In-Stock

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6,813

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SupplyDigital Components

Austria . 5,826 parts In-Stock

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5,826

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Problanco Electronics

Mexico . 2,547 parts In-Stock

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2,547

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UHIMA Technologies

Türkiye . 923 parts In-Stock

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923

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Overview

Unlock a world of possibilities with the MV2109RLRA Varactor Diode by Onsemi. Known for its superior quality and performance, Onsemi is a trusted manufacturer in the industry. The MV2109RLRA is perfect for high frequency to ultra high frequency applications, offering a minimum quality factor of 200 and a nominal diode capacitance of 33 pF. With a maximum power dissipation of 0.28 W and a minimum breakdown voltage of 30 V, this diode provides unmatched value and benefits to customers looking for reliable and efficient solutions. Elevate your projects with the MV2109RLRA Varactor Diode from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures efficient performance and reliable operation of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the varactor diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates sharp changes in capacitance, making it suitable for high frequency applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band allows for versatile usage in various high frequency to ultra high frequency applications.

Package Shape: ROUND

Round package shape provides ease of mounting and compatibility with standard configurations.

No. of Terminals: 2

Having 2 terminals simplifies the connection and installation process of the varactor diode.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers space-saving and efficient utilization in circuit layout.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy access for soldering and connection in the circuit.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation rating indicates the diode's capability to handle power efficiently.

Nominal Diode Capacitance: 33 pF

The specified capacitance value allows for precise and controlled tuning in RF circuits.

Minimum Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, the varactor diode offers reliable protection against voltage surges.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures secure soldering during assembly processes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it enables frequency modulation and tuning in various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides mechanical stability and ease of soldering during PCB assembly.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage rating ensures reliable performance under reverse bias conditions.

Diode Cap Tolerance: 10 %

A 10% capacitance tolerance allows for accurate and consistent circuit tuning.

Diode Element Material: SILICON

Silicon diode element material offers stable performance and high reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 provides a wide range of capacitance values for frequency tuning applications.

Technical Specifications

Varactor Diodes MV2109RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2109RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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