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BB150115

NXP Semiconductors

BB150115 by NXP Semiconductors

BB150115 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 30 V. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,718 parts In-Stock

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3,718

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Vyrian

USA . 285 parts In-Stock

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285

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Anansix

USA . 255 parts In-Stock

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255

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One Stop Electronics

USA . 1,578 parts In-Stock

1+ parts

$2.010

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1,578

$2.010

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Native Components

USA . 407 parts In-Stock

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$172.110

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$165.226

407

$172.110

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$165.226

Northwest PG Solutions

USA . 206 parts In-Stock

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$189.321

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206

$189.321

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UNI Independent Distributors

Spain . 2,880 parts In-Stock

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2,880

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Corphita

USA . 1,490 parts In-Stock

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1,490

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Overview

Unlock unparalleled performance with the BB150115 varactor diode from NXP Semiconductors. Renowned for their exceptional quality and reliability, NXP delivers this advanced component designed for very high frequency applications. Enjoy superior tuning capabilities, reduced power consumption, and a compact footprint that enhances design flexibility. Ideal for RF circuits, communication systems, and more, this diode ensures your projects thrive with utmost efficiency and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and lightweight design, making it suitable for various applications.

Config: SINGLE

A single configuration simplifies integration into circuits, making it user-friendly and efficient for designers.

Frequency Band: VERY HIGH FREQUENCY

Operating in the very high frequency band allows for applications in advanced communication systems and RF designs.

Surface Mount: YES

Surface mount capability enables compact circuit designs and facilitates automated assembly processes.

Maximum Reverse Current: 0.01 uA

Extremely low maximum reverse current enhances reliability and reduces power losses in sensitive applications.

Package Shape: RECTANGULAR

The rectangular shape ensures efficient space utilization on PCB layouts, enabling more compact designs.

Reverse Test Voltage: 30 V

A reverse test voltage of 30V provides robustness against accidental overvoltage conditions, ensuring stability.

No. of Terminals: 2

With only two terminals, installation and wiring are simplified, reducing complexity in circuit board layouts.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes real estate on PCBs, ideal for tightly packed electronic devices.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this diode to be used in demanding environments without thermal issues.

Minimum Operating Temperature: -55 °C

The wide temperature range from -55 °C makes this product suitable for extreme conditions, such as aerospace applications.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting configurations, enhancing compatibility with existing designs.

Maximum Power Dissipation: 0.2 W

A power dissipation rating of 0.2 W indicates suitability for low-power applications while maintaining efficiency.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V provides a safe margin for operation in various electrical environments.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for tuning applications in RF and communication circuits, adding versatility.

Terminal Form: GULL WING

The gull wing terminal form enhances solderability, ensuring robust connections during manufacturing.

Diode Element Material: SILICON

Silicon as the diode element material contributes to reliable performance and widespread availability in the market.

Minimum Diode Capacitance Ratio: 14

A high minimum capacitance ratio enables effective tuning in RF circuits, increasing the versatility of the diode.

Technical Specifications

Varactor Diodes BB150115 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

14

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB150115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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