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1N5690

Onsemi

1N5690 by Onsemi

1N5690 by Onsemi is a varactor diode with a min quality factor of 450 and max reverse current of 0.00000002 uA. It has a nominal capacitance of 39 pF, making it ideal for applications requiring variable capacitance diodes in circuits with voltage up to 40 V. The diode operates b/w -65 to 175 °C and comes in an axial package shape made of glass material.

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Lifecycle Status

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1k+

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Vyrian

USA . 2,308 parts In-Stock

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Digiode

USA . 762 parts In-Stock

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Kulean Microsystems

USA . 8,390 parts In-Stock

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SupplyDigital Components

Austria . 8,043 parts In-Stock

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TANS Electronics

Latvia . 3,904 parts In-Stock

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Corphita

USA . 1,702 parts In-Stock

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Native Components

USA . 927 parts In-Stock

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Problanco Electronics

Mexico . 790 parts In-Stock

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UHIMA Technologies

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Northwest PG Solutions

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South Africa . 66 parts In-Stock

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Overview

Unleash the potential of your electronic projects with the 1N5690 Varactor Diode by Onsemi. Known for their high-quality components, Onsemi delivers precision engineering and reliability in every product. The 1N5690 is perfect for applications requiring variable capacitance, offering a wide range of possibilities for circuit design. With its superior performance and durability, this diode brings exceptional value to customers seeking top-notch components for their projects. Experience the advantages of Onsemi's expertise with the 1N5690 Varactor Diode today.

Feature Benefit Bullets

Minimum Quality Factor: 450

Higher quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass package provides durability and reliable performance.

Config: SINGLE

Single configuration makes it easier to integrate into circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures fast and precise capacitance changes.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and improves efficiency.

Package Shape: ROUND

Round shape allows for easy mounting and alignment in circuits.

Reverse Test Voltage: 40 V

High reverse test voltage ensures reliability and stability under varying conditions.

No. of Terminals: 2

Having just 2 terminals simplifies the connection and usage of the diode.

Package Style (Meter): LONG FORM

Long form package style facilitates easy handling and installation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good electrical conductivity and corrosion resistance.

Terminal Position: AXIAL

Axial terminal position allows for easy integration into circuit designs.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents interference with other components.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation capability allows for handling high power applications.

Nominal Diode Capacitance: 39 pF

Nominal capacitance value is suitable for various capacitance control applications.

Minimum Breakdown Voltage: 45 V

Higher minimum breakdown voltage provides better protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode type enables voltage-controlled capacitance for tuning applications.

Terminal Form: WIRE

Wire terminal form allows for flexible connection options and easy soldering.

Maximum Repetitive Peak Reverse Voltage: 40 V

High maximum reverse voltage ensures durability and reliability under reverse bias conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for precise tuning and control in circuits.

Diode Element Material: SILICON

Silicon material offers good performance characteristics and reliability as a diode element.

Minimum Diode Capacitance Ratio: 3.3

Higher minimun capacitance ratio enables wider tuning range and flexibility in applications.

Technical Specifications

Varactor Diodes 1N5690 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.3

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5690 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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