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1N5696

Onsemi

1N5696 by Onsemi

1N5696 by Onsemi is a varactor diode with 450 min Quality Factor, 6.8 pF nominal capacitance, and 65 V min breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp ranges from -65 to 175 °C.

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Northwest PG Solutions

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Kulean Microsystems

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Overview

Unlock the potential of your electronic designs with the 1N5696 Varactor Diode by Onsemi. Manufactured with precision and quality in mind, this diode offers a minimum quality factor of 450 and a maximum reverse current of 0.02 uA, ensuring reliable performance. With a wide range of applications in frequency modulation, voltage-controlled oscillators, and phase-locked loops, this diode provides flexibility and efficiency to your projects. Trust in Onsemi's reputation for excellence and innovation to deliver value and superior performance to meet all your electronic needs.

Feature Benefit Bullets

Minimum Quality Factor: 450

A high minimum quality factor of 450 ensures high performance and efficiency in applications where this varactor diode is used.

Package Body Material: GLASS

Glass package body material provides excellent mechanical strength and stability, making the varactor diode durable and reliable.

Config: SINGLE

Single configuration simplifies the design and integration process, making this varactor diode easy to use in various circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diode classification allows for precise and quick changes in capacitance, making it ideal for frequency-tuning applications.

Maximum Reverse Current: 0.02 uA

Low maximum reverse current of 0.02 uA ensures minimal power loss and improves overall efficiency of the circuit.

Package Shape: ROUND

Round package shape provides uniform distribution of stress, enhancing the reliability and longevity of the varactor diode.

Reverse Test Voltage: 60 V

High reverse test voltage of 60 V ensures the varactor diode can withstand voltage spikes and variations without damage.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and enables easy integration into different circuit setups.

Package Style (Meter): LONG FORM

Long form package style provides more space for components, improving heat dissipation and overall performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175 °C allows the varactor diode to be used in a wide range of temperature environments without performance degradation.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature of -65 °C ensures the varactor diode can withstand harsh cold environments without malfunctioning.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and conductivity, making installation and connection processes smooth and efficient.

Terminal Position: AXIAL

Axial terminal position simplifies the installation process and ensures proper alignment in circuit layouts.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures stable performance of the varactor diode in complex circuit setups.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation of 0.4 W allows the varactor diode to handle higher power levels without overheating or damage.

Nominal Diode Capacitance: 6.8 pF

Nominal diode capacitance of 6.8 pF provides a good balance between capacitance range and stability for various frequency-tuning applications.

Minimum Breakdown Voltage: 65 V

High minimum breakdown voltage of 65 V ensures the varactor diode can withstand voltage surges and spikes without breakdown or damage.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product allows for precise tuning and adjustment of capacitance, making it versatile in frequency modulation circuits.

Terminal Form: WIRE

Wire terminal form ensures reliable electrical connections and easy integration into various circuit setups.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage of 60 V ensures the varactor diode can handle repeated voltage reversals without damage.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides flexibility in design and allows for variations in capacitance values without affecting overall performance significantly.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, low leakage current, and stable performance in various temperature conditions.

Minimum Diode Capacitance Ratio: 2.7

A minimum diode capacitance ratio of 2.7 ensures a wide range of capacitance values can be achieved, making this varactor diode versatile in different tuning applications.

Technical Specifications

Varactor Diodes 1N5696 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.7

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5696 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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