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1N5687

Onsemi

1N5687 by Onsemi

1N5687 by Onsemi is a varactor diode with 22pF capacitance, 45V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Vyrian

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Northwest PG Solutions

USA . 1,161 parts In-Stock

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Kulean Microsystems

USA . 5,276 parts In-Stock

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TANS Electronics

Latvia . 4,199 parts In-Stock

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Problanco Electronics

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UHIMA Technologies

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Overview

Unleash the power of advanced technology with the 1N5687 Varactor Diode by Onsemi. Known for their superior quality and expertise in manufacturing, Onsemi delivers top-of-the-line products that exceed industry standards. The 1N5687 is a versatile diode perfect for various applications. With its high-quality factor, low reverse current, and wide operating temperature range, this diode offers unmatched value, efficiency, and reliability to customers. Upgrade your electronic projects with the 1N5687 and experience the difference Onsemi can make.

Feature Benefit Bullets

Minimum Quality Factor: 500

Higher quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass package provides durability and reliability to the varactor diode.

Config: SINGLE

Single configuration simplifies the design and integration of the varactor diode into circuits.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved overall performance.

Package Shape: ROUND

Round shape offers ease of handling and installation of the varactor diode.

Reverse Test Voltage: 40 V

High reverse test voltage ensures reliability and robustness of the varactor diode.

No. of Terminals: 2

Two terminals provide simple connection and integration of the varactor diode into circuits.

Package Style (Meter): LONG FORM

Long form package style offers versatility and compatibility with various applications.

Maximum Operating Temperature: 175 °C

High operating temperature range allows the varactor diode to function in a wide range of environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can operate in colder conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for the terminals of the varactor diode.

Terminal Position: AXIAL

Axial terminal position simplifies the layout and connection of the varactor diode in circuits.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures proper functioning of the varactor diode.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows the varactor diode to handle high power applications.

Nominal Diode Capacitance: 22 pF

Nominal capacitance value ensures precise tuning and control in circuits using the varactor diode.

Minimum Breakdown Voltage: 45 V

Higher breakdown voltage provides safety and protection for the varactor diode in case of voltage surge.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers flexibility in tuning and frequency control in circuits.

Terminal Form: WIRE

Wire terminal form allows for easy connection and compatibility with various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage rating ensures the reliability and durability of the varactor diode.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for variations in capacitance values without affecting performance.

Diode Element Material: SILICON

Silicon element material provides high reliability and performance for the varactor diode.

Minimum Diode Capacitance Ratio: 3.3

Higher minimum capacitance ratio ensures a wider range of capacitance values for tuning in circuits.

Technical Specifications

Varactor Diodes 1N5687 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.3

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5687 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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