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1N5469

Onsemi

1N5469 by Onsemi

1N5469 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 500 and low reverse current of 0.00000002uA.

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Vyrian

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USA . 797 parts In-Stock

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$0.326

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Northwest PG Solutions

USA . 567 parts In-Stock

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Kulean Microsystems

USA . 8,156 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Overview

Unlock endless possibilities with the 1N5469 Varactor Diode by Onsemi. Crafted with precision and expertise, this diode offers unparalleled quality and reliability. Perfect for applications in RF tuning, voltage-controlled oscillators, and frequency modulators, this diode ensures smooth performance and efficiency. Experience the value of superior manufacturing with Onsemi's 1N5469, where innovation meets excellence.

Feature Benefit Bullets

Minimum Quality Factor: 500

High quality factor ensures efficient performance and reliability of the varactor diode.

Package Body Material: GLASS

Glass package body material provides high durability and stability to the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the varactor diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diode classification allows for precise control and modulation of capacitance.

Maximum Reverse Current: 0.00000002 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the varactor diode.

Package Shape: ROUND

Round package shape facilitates easy mounting and installation of the varactor diode in various applications.

Reverse Test Voltage: 25 V

High reverse test voltage rating provides excellent protection against reverse voltage breakdown in the varactor diode.

No. of Terminals: 2

Two terminals simplify the connection and usage of the varactor diode in circuits.

Package Style (Meter): LONG FORM

Long form package style ensures easy handling and maintenance of the varactor diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for versatile use of the varactor diode in different environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable performance of the varactor diode even in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability for connecting the varactor diode in circuits.

Terminal Position: AXIAL

Axial terminal position simplifies the placement and orientation of the varactor diode during installation.

Case Connection: ISOLATED

Isolated case connection enhances the electrical insulation and safety of the varactor diode.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation rating ensures the varactor diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 27 pF

Nominal capacitance of 27 pF provides the desired capacitance value for specific circuit requirements.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage provides reliability and protection against voltage spikes in the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode type allows for adjustable capacitance, making it suitable for frequency-tuning applications.

Terminal Form: WIRE

Wire terminal form offers easy connectivity and flexibility when connecting the varactor diode in circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating ensures the varactor diode can withstand reverse voltage stress.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides flexibility in circuit design and performance adjustments.

Diode Element Material: SILICON

Silicon diode element material offers reliability, stability, and consistent performance in the varactor diode.

Minimum Diode Capacitance Ratio: 2.9

Minimum capacitance ratio of 2.9 allows for a wide range of capacitance values for different frequency modulation requirements.

Technical Specifications

Varactor Diodes 1N5469 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5469 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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