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BB909A-AMMOPAK

NXP Semiconductors

BB909A-AMMOPAK by NXP Semiconductors

BB909A-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,888 parts In-Stock

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Anansix

USA . 2,856 parts In-Stock

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Vyrian

USA . 159 parts In-Stock

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Native Components

USA . 68 parts In-Stock

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$0.074

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$0.071

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Northwest PG Solutions

USA . 816 parts In-Stock

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$0.081

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One Stop Electronics

USA . 1,302 parts In-Stock

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$3.010

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Corphita

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UNI Independent Distributors

Spain . 1,601 parts In-Stock

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Overview

Unlock the potential of your designs with the BB909A-AMMOPAK from NXP Semiconductors, a leader in semiconductor innovation. This high-quality varactor diode excels in very high frequency applications, ensuring optimal performance and reliability. With its robust glass packaging and isolated case connection, it offers unmatched stability at elevated temperatures. Elevate your projects with NXP’s commitment to quality and experience seamless integration and efficiency like never before!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures durability and protection against environmental factors, making the diode reliable in various applications.

Config: SINGLE

A single configuration simplifies integration into circuits and reduces space requirements, contributing to more compact designs.

Frequency Band: VERY HIGH FREQUENCY

Optimized for very high frequency operations, this diode is ideal for RF applications, ensuring efficient performance in communication systems.

Maximum Reverse Current: 0.01 uA

A low maximum reverse current indicates minimal leakage, enhancing the efficiency and reliability of the diode in high-frequency circuits.

Package Shape: ROUND

The round package shape allows for easier handling and installation, and is suitable for various PCB designs, ensuring flexibility in applications.

Reverse Test Voltage: 28 V

With a reverse test voltage of 28 V, this diode is capable of handling significant reverse bias, providing reliable operation even in high-stress conditions.

Number of Terminals: 2

Having only two terminals simplifies circuit design and integration, making it an efficient choice for various electronic applications.

Package Style (Meter): LONG FORM

The long form package style can improve thermal performance and allows for better contact with PCB pads, enhancing overall reliability.

Maximum Operating Temperature: 100 °C

A high maximum operating temperature ensures that the diode can function effectively in demanding environments without failure.

Terminal Position: AXIAL

Axial terminal positioning facilitates easy mounting on PCBs, leading to more straightforward circuit layouts and reduced assembly complexity.

Case Connection: ISOLATED

The isolated case connection improves safety and prevents unwanted interactions with other circuit components, ensuring reliable performance.

Minimum Breakdown Voltage: 32 V

A high minimum breakdown voltage enhances the robustness of the diode, allowing it to withstand voltage spikes without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is specifically designed for tuning and frequency modulation applications, making it useful in RF resonant circuits.

Terminal Form: WIRE

Wire form terminals provide flexibility in connections and allow for better adaptability in custom or specialized circuit designs.

Diode Element Material: SILICON

Silicon as the diode element material ensures good electrical performance and reliability, as it's widely used in semiconductor applications.

Minimum Diode Capacitance Ratio: 12

A high minimum diode capacitance ratio allows for significant variability in capacitance, making it well-suited for tuning and frequency control tasks.

Technical Specifications

Varactor Diodes BB909A-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

2.5% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB909A-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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