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BB909A-TAPE-REEL

NXP Semiconductors

BB909A-TAPE-REEL by NXP Semiconductors

BB909A-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,827 parts In-Stock

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Digiode

USA . 989 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 1,577 parts In-Stock

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$0.010

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Native Components

USA . 841 parts In-Stock

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$0.063

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$0.060

841

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Northwest PG Solutions

USA . 1,714 parts In-Stock

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$0.069

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1,714

$0.069

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$0.061

UNI Independent Distributors

Spain . 5,968 parts In-Stock

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Corphita

USA . 2,182 parts In-Stock

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Overview

Elevate your designs with the BB909A-TAPE-REEL varactor diode from NXP Semiconductors, a leader in innovative electronic solutions. Crafted from high-quality glass and engineered for very high frequency applications, this reliable component ensures superior performance and minimal reverse current. Ideal for tuning circuits and RF applications, its robust design offers exceptional stability and efficiency, making it the perfect choice for engineers seeking excellence in their projects. Experience the unmatched value and benefits that come from choosing trusted technology!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures excellent thermal stability and minimizes dielectric losses, making it suitable for high-frequency applications.

Config: SINGLE

A single configuration simplifies circuit design and implementation, enhancing ease of integration into various electronic systems.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequencies, this diode is ideal for applications such as RF circuits, enabling efficient signal modulation and demodulation.

Maximum Reverse Current: 0.01 uA

The extremely low maximum reverse current indicates high efficiency, reducing power loss and improving overall performance in sensitive electronic applications.

Package Shape: ROUND

The round package shape offers improved thermal dissipation and allows for easier mounting in various circuit configurations.

Reverse Test Voltage: 28 V

The robust reverse test voltage provides reliable protection against reverse polarity, enhancing the diode's durability in various applications.

No. of Terminals: 2

Having only two terminals simplifies the circuit connections, making it easier to implement in straightforward designs.

Package Style (Meter): LONG FORM

The long form package style may offer better space utilization on printed circuit boards (PCBs), contributing to compact designs.

Maximum Operating Temperature: 100 °C

A maximum operating temperature of 100 °C ensures reliable performance in high-temperature environments, suitable for various demanding applications.

Terminal Position: AXIAL

Axial terminal positioning allows for versatile mounting options, accommodating different PCB layouts and assembly processes.

Case Connection: ISOLATED

Isolated case connection enhances safety and performance by preventing undesirable current paths that could lead to circuit interference.

Minimum Breakdown Voltage: 32 V

A minimum breakdown voltage of 32 V ensures that the diode can handle higher voltages, adding to its reliability in various applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers tunable capacitance, making it essential for tuning circuits, voltage-controlled oscillators, and other RF applications.

Terminal Form: WIRE

The wire terminal form enhances flexibility in layout and can provide better handling during assembly, ensuring a robust connection.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent semiconductor properties, contributing to efficient signal processing and low noise.

Minimum Diode Capacitance Ratio: 12

A high minimum diode capacitance ratio indicates the ability to deliver significant capacitance variation, making it suitable for fine-tuning in RF applications.

Technical Specifications

Varactor Diodes BB909A-TAPE-REEL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

2.5% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB909A-TAPE-REEL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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