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MV2101ZL1

Onsemi

MV2101ZL1 by Onsemi

MV2101ZL1 by Onsemi is a single varactor diode with a min quality factor of 450, nominal capacitance of 6.8 pF, and breakdown voltage of 30 V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C, making it suitable for RF tuning circuits and frequency modulators.

Median Price

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1k+

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Digiode

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Vyrian

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Kulean Microsystems

USA . 7,587 parts In-Stock

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SupplyDigital Components

Austria . 6,068 parts In-Stock

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TANS Electronics

Latvia . 5,986 parts In-Stock

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Problanco Electronics

Mexico . 3,588 parts In-Stock

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UHIMA Technologies

Türkiye . 769 parts In-Stock

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Corphita

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Overview

Enhance your electronic projects with the MV2101ZL1 Varactor Diode by Onsemi. With a minimum quality factor of 450 and a nominal capacitance of 6.8 pF, this diode offers superior performance for applications requiring variable capacitance. Onsemi's reputation for high-quality components ensures reliability and longevity in your designs. Whether you're working on RF tuning, frequency modulation, or voltage-controlled oscillators, the MV2101ZL1 provides the precision and efficiency you need. Experience the value and benefits of advanced technology with Onsemi's Varactor Diodes.

Feature Benefit Bullets

Minimum Quality Factor: 450

High quality factor indicates better performance and stability in the circuit, making this varactor diode a reliable choice for applications requiring precise tuning and frequency control.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protection for the diode, ensuring durability and reliability in various environments.

Config: SINGLE

Single configuration simplifies the design and integration of the varactor diode into circuitry, making it suitable for straightforward applications.

Package Shape: ROUND

Round shape allows for easy mounting and handling of the varactor diode, making it convenient for assembly and installation.

No. of Terminals: 2

Having 2 terminals simplifies the connection and usage of the varactor diode in circuit designs, making it user-friendly and suitable for beginners.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers mechanical stability and ease of use for meter applications, ensuring accurate measurements and performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in industrial and harsh environments, making this varactor diode suitable for a wide range of applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and optimal performance in electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position offers convenient placement and soldering of the varactor diode, making it easy to integrate into various circuit layouts.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation capability ensures reliable operation and protection against overheating, making this varactor diode suitable for power applications.

Nominal Diode Capacitance: 6.8 pF

Nominal capacitance value of 6.8 pF allows for precise tuning and frequency control in circuit designs, making this varactor diode ideal for RF and microwave applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage of 30 V provides protection against voltage spikes and surges, ensuring the reliability and safety of the varactor diode in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers adjustable capacitance for tuning and modulation applications, making this varactor diode versatile and suitable for various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy mounting and soldering of the varactor diode onto printed circuit boards, ensuring secure connections and mechanical stability.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% enables accurate tuning and adjustments in circuit designs, making this varactor diode a reliable choice for precision applications.

Diode Element Material: SILICON

Silicon diode element material provides high-quality construction and performance, ensuring long-term reliability and stability in electronic circuits.

Minimum Diode Capacitance Ratio: 2.5

High minimum capacitance ratio of 2.5 allows for wide tuning range and flexibility in circuit designs, making this varactor diode suitable for frequency modulation and signal processing applications.

Technical Specifications

Varactor Diodes MV2101ZL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2101ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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