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MMVL409T1

Onsemi

MMVL409T1 by Onsemi

MMVL409T1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and operates at a max power dissipation of 0.2 W. This single-configured diode in small outline package is ideal for RF tuning circuits.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

21,000

-

$0.132

$0.110

$0.098

DigiKey

USA . 21,000 parts In-Stock

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$0.170

21,000

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$0.170

Farnell

UK . 21,000 parts In-Stock

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$0.087

21,000

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$0.087

Verical

USA . 21,000 parts In-Stock

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$0.122

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$0.122

Distributors (In-Stock)

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Vyrian

USA . 2,186 parts In-Stock

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$0.087

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2,186

$0.087

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Digiode

USA . 208 parts In-Stock

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$0.103

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208

$0.103

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Mil-Aero Solutions, Inc.

USA . 2,969 parts In-Stock

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2,969

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Distributors (Availability)

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Corohmni

South Africa . 157 parts In-Stock

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$0.087

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157

$0.087

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Corphita

USA . 1,338 parts In-Stock

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$0.097

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1,338

$0.097

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QUARKTWIN TECHNOLOGY LTD

USA . 21,424 parts In-Stock

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21,424

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Continental Prestige Electronics

USA . 21,000 parts In-Stock

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$0.096

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21,000

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$0.096

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Problanco Electronics

Mexico . 7,523 parts In-Stock

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7,523

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SupplyDigital Components

Austria . 6,476 parts In-Stock

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TANS Electronics

Latvia . 2,711 parts In-Stock

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UHIMA Technologies

Türkiye . 694 parts In-Stock

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Kulean Microsystems

USA . 408 parts In-Stock

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Overview

Elevate your electronics designs with the MMVL409T1 Varactor Diode by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology in a compact single configuration package. Ideal for very high-frequency applications, this diode offers a minimum quality factor of 200 and a nominal capacitance of 29 pF. Whether you're working on RF tuning, frequency modulation, or voltage-controlled oscillators, the MMVL409T1 provides unparalleled performance and precision. Trust Onsemi to bring value, benefits, and advantages to your projects with this versatile variable capacitance diode.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor means better efficiency and performance in high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, ensuring reliable performance in demanding environments.

Surface Mount: YES

The surface mount capability makes the diode easy to integrate onto PCBs, saving space and improving manufacturability.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this diode can handle moderate power levels without overheating.

Nominal Diode Capacitance: 29 pF

The specific capacitance value of 29 pF ensures accurate tuning and performance in variable capacitance applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20 V provides protection against reverse voltage spikes, increasing the diode's reliability.

Diode Element Material: SILICON

Silicon is a common and reliable material for diodes, offering good performance and stability over a wide temperature range.

Technical Specifications

Varactor Diodes MMVL409T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

1.5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL409T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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