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MMVL3102T1

Onsemi

MMVL3102T1 by Onsemi

MMVL3102T1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it suitable for small outline packages in RF circuits. With gull wing terminals and tin/lead finish, this diode offers precise variable capacitance control.

Median Price

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Vyrian

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USA . 30,000 parts In-Stock

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Kulean Microsystems

USA . 7,859 parts In-Stock

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TANS Electronics

Latvia . 4,811 parts In-Stock

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Overview

Discover the MMVL3102T1 by Onsemi, a top-quality Varactor Diode that offers exceptional performance and reliability for your high-frequency applications. Manufactured by Onsemi, a trusted leader in the industry, this diode boasts a minimum quality factor of 200 and a nominal diode capacitance of 22 pF. With a maximum breakdown voltage of 30 V and a small outline package style, this diode is perfect for a wide range of applications. Experience the value and benefits of the MMVL3102T1, from its superior performance to its durable construction, this diode delivers unmatched quality that will exceed your expectations.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures reliable performance and stable operation.

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective packaging material.

Config: SINGLE

Simplified design for easy integration.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency signal processing.

Surface Mount: YES

Convenient installation on circuit boards.

Package Shape: RECTANGULAR

Optimal form factor for efficient use of space.

No. of Terminals: 2

Simple two-terminal connection for ease of use.

Package Style (Meter): SMALL OUTLINE

Compact package for space-constrained applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Standard finish for reliable electrical connections.

Terminal Position: DUAL

Allows for flexibility in mounting orientation.

Maximum Power Dissipation: 0.2 W

Suitable for low-power applications.

Nominal Diode Capacitance: 22 pF

Desirable capacitance value for various circuit needs.

Minimum Breakdown Voltage: 30 V

Ensures protection against excessive voltage conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow time to prevent damage during installation.

Peak Reflow Temperature °C: 235

Suitable temperature for reliable soldering.

Diode Type: VARIABLE CAPACITANCE DIODE

Provides adjustable capacitance for flexibility in circuit design.

Terminal Form: GULL WING

Allows for easy surface mounting on PCBs.

Maximum Repetitive Peak Reverse Voltage: 30 V

Sufficient reverse voltage rating for typical applications.

Diode Cap Tolerance: 11.11 %

Provides close tolerance for consistent performance.

Diode Element Material: SILICON

Common and reliable material for diode construction.

Minimum Diode Capacitance Ratio: 4.5

Provides a wide range of capacitance adjustment for versatile use.

Technical Specifications

Varactor Diodes MMVL3102T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

11.11 %

Minimum Diode Capacitance Ratio:

4.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL3102T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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