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GC1719-192

Microchip Technology

GC1719-192 by Microchip Technology

GC1719-192 by Microchip Technology is a SINGLE varactor diode with 33pF nominal capacitance, abrupt classification, and 800 min quality factor. Ideal for applications in very high frequency to Ku band due to its 60V min breakdown voltage and -55°C to 125°C operating temperature range.

Median Price

$20.350

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 1,468 parts In-Stock

1+ parts

$20.350

100+ parts

$18.360

1k+ parts

$16.540

10k+ parts

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1,468

$20.350

$18.360

$16.540

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$18.495

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300

$18.495

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Vyrian

USA . 6,325 parts In-Stock

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6,325

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,577 parts In-Stock

1+ parts

$1.010

100+ parts

-

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1,577

$1.010

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Continental Prestige Electronics

USA . 323 parts In-Stock

1+ parts

$18.495

100+ parts

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1k+ parts

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10k+ parts

$18.125

323

$18.495

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-

$18.125

AZTECH Wire

Italy . 1,131 parts In-Stock

1+ parts

$19.100

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1,131

$19.100

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Microchip USA

USA . 4,280 parts In-Stock

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4,280

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Argo Parts USA

USA . 3,278 parts In-Stock

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3,278

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Netroflash

USA . 1,000 parts In-Stock

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$18.125

1k+ parts

$17.570

10k+ parts

$17.200

1,000

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$18.125

$17.570

$17.200

RGB Technical Solutions

Ukraine . 819 parts In-Stock

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819

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Overview

Unlock the potential of your high-frequency applications with the GC1719-192 Varactor Diode by Microchip Technology. With a minimum quality factor of 800 and an abrupt variable capacitance diode classification, this diode is designed to deliver top-notch performance in very high frequency to Ku band applications. Trust in the quality and reliability of Microchip Technology as you experience the value and benefits of this diode, from its low reverse current of 0.02 uA to its wide operating temperature range. Enhance your designs with the precision and efficiency of the GC1719-192, providing you with the competitive edge you need in the market.

Feature Benefit Bullets

Minimum Quality Factor: 800

A high quality factor indicates low losses in the varactor diode, ensuring efficient operation and high performance.

Configuration: SINGLE

Single configuration makes it easy to integrate into different electronic circuits and systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes have a sharp transition in capacitance, allowing for precise tuning in high frequency applications.

Frequency Band: VERY HIGH FREQUENCY TO KU BAND

Covers a wide range of frequencies from very high frequency to Ku band, making it versatile for various frequency applications.

Maximum Reverse Current: 0.02 uA

Low reverse current ensures minimal power loss and efficient operation of the varactor diode.

Reverse Test Voltage: 55 V

Withstands reverse test voltage up to 55V, providing reliability and durability in different operating conditions.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures up to 125°C, suitable for demanding environments.

Minimum Operating Temperature: -55 °C

Can operate at low temperatures down to -55°C, ensuring it can be used in a wide range of temperature conditions.

Nominal Diode Capacitance: 33 pF

Nominal capacitance of 33 pF provides a good balance between capacitance range and tuning capabilities for high frequency applications.

Minimum Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, it offers protection against voltage spikes and ensures reliable operation.

Diode Cap Tolerance: 10%

10% tolerance in diode capacitance allows for flexibility in circuit design and tuning requirements.

Diode Element Material: SILICON

Silicon diode element material provides stable and consistent performance over time.

Minimum Diode Capacitance Ratio: 7

A high minimum diode capacitance ratio of 7 offers greater tuning range and flexibility in frequency applications.

Technical Specifications

Varactor Diodes GC1719-192 attributes and parameters. Explore more Varactor Diodes devices from Microchip Technology

Specs

Minimum Breakdown Voltage:

60 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

7

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY TO KU BAND

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Minimum Quality Factor:

800

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

55 V

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

GC1719-192 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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