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MMVL105GT1G

Onsemi

MMVL105GT1G by Onsemi

MMVL105GT1G by Onsemi is a varactor diode with a nominal capacitance of 2.15 pF and a breakdown voltage of 30 V, suitable for RF tuning applications. It features a small outline package style, gull wing terminal form, and can handle a max power dissipation of 0.2 W in surface mount configurations.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

84,000

-

$0.132

$0.110

$0.098

DigiKey

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.170

84,000

-

-

-

$0.170

Verical

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.122

84,000

-

-

-

$0.122

Distributors (In-Stock)

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Vyrian

USA . 1,557 parts In-Stock

1+ parts

$0.087

100+ parts

-

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-

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1,557

$0.087

-

-

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Digiode

USA . 199 parts In-Stock

1+ parts

$0.103

100+ parts

-

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199

$0.103

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 430 parts In-Stock

1+ parts

$0.087

100+ parts

-

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430

$0.087

-

-

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Corphita

USA . 2,449 parts In-Stock

1+ parts

$0.097

100+ parts

-

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2,449

$0.097

-

-

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Continental Prestige Electronics

USA . 84,000 parts In-Stock

1+ parts

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100+ parts

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$0.096

10k+ parts

-

84,000

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-

$0.096

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Kepictronics

USA . 42,000 parts In-Stock

1+ parts

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42,000

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QUARKTWIN TECHNOLOGY LTD

USA . 7,990 parts In-Stock

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7,990

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Kulean Microsystems

USA . 7,576 parts In-Stock

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7,576

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TANS Electronics

Latvia . 6,707 parts In-Stock

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6,707

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Perfect Parts

USA . 5,040 parts In-Stock

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5,040

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Problanco Electronics

Mexico . 872 parts In-Stock

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872

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SupplyDigital Components

Austria . 625 parts In-Stock

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625

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UHIMA Technologies

Türkiye . 225 parts In-Stock

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225

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Overview

Enhance your electronics projects with the MMVL105GT1G Varactor Diode by Onsemi. Crafted with precision and expertise, this diode offers exceptional quality and performance. Perfect for applications requiring variable capacitance, this diode is designed to deliver reliable results every time. With its small outline package and dual terminals, it's easy to incorporate into your designs. Trust Onsemi to provide you with innovative solutions that add value to your projects. Choose the MMVL105GT1G for superior performance and versatility.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the varactor diode easy to handle and resistant to damage during handling and installation.

Config: SINGLE

A single configuration simplifies the usage and installation process, making it easier for users to integrate into their circuit designs.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor that is compatible with many circuit designs and layouts.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring and connection process, reducing the chances of errors during setup.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for a more compact and efficient circuit layout.

Terminal Finish: TIN

Tin terminal finish improves solderability and ensures a reliable electrical connection, enhancing the overall performance of the varactor diode.

Maximum Power Dissipation: 0.2 W

The high maximum power dissipation rating ensures the varactor diode can handle a wide range of power levels, making it versatile for various applications.

Nominal Diode Capacitance: 2.15 pF

The low nominal diode capacitance allows for precise tuning and frequency control in RF circuits, making it ideal for applications that require stable capacitance values.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage provides protection against voltage spikes and ensures the reliability and longevity of the varactor diode.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time minimizes the exposure of the varactor diode to high temperatures, reducing the risk of damage during the manufacturing process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows the varactor diode to withstand the soldering process without losing its electrical properties.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise control over the capacitance value, making it suitable for frequency modulation and tuning applications.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and secure attachment during soldering, ensuring a reliable connection in demanding environments.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage rating provides protection against reverse voltage spikes, enhancing the overall reliability of the varactor diode.

Diode Cap Tolerance: 30.23 %

The tight capacitance tolerance ensures consistent performance and accurate tuning capabilities in RF circuits, making it a reliable choice for critical applications.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability, making the varactor diode suitable for demanding RF applications that require stable electrical properties.

Minimum Diode Capacitance Ratio: 4

The high minimum diode capacitance ratio allows for a wide range of capacitance values, providing flexibility in tuning and frequency control applications.

Technical Specifications

Varactor Diodes MMVL105GT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

30.23 %

Minimum Diode Capacitance Ratio:

4

Nominal Diode Capacitance:

2.15 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL105GT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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