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MV2105RLRP

Onsemi

MV2105RLRP by Onsemi

MV2105RLRP by Onsemi is a Varactor Diode with 15pF nominal capacitance, 30V breakdown voltage, and 400 min quality factor. It is ideal for applications requiring variable capacitance diodes in environments up to 150 °C operating temperature.

Median Price

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< 1k

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USA . 383 parts In-Stock

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Vyrian

USA . 248 parts In-Stock

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SupplyDigital Components

Austria . 7,879 parts In-Stock

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TANS Electronics

Latvia . 4,800 parts In-Stock

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Problanco Electronics

Mexico . 4,307 parts In-Stock

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Kulean Microsystems

USA . 4,205 parts In-Stock

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UHIMA Technologies

Türkiye . 821 parts In-Stock

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Corohmni

South Africa . 361 parts In-Stock

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Corphita

USA . 246 parts In-Stock

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Overview

Unlock new possibilities with the MV2105RLRP Varactor Diode by Onsemi. With a minimum quality factor of 400, this diode offers superior performance and reliability for a wide range of applications. Whether you're in the telecommunications, aerospace, or automotive industry, this diode's single configuration and high capacitance ratio of 2.5 provide unmatched value and flexibility. Trust Onsemi's reputation for quality and innovation to take your projects to the next level with the MV2105RLRP.

Feature Benefit Bullets

Minimum Quality Factor: 400

Higher quality factor indicates better performance and stability of the varactor diode.

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package provides durability and protection to the diode, making it suitable for various applications.

Config: SINGLE

SINGLE configuration simplifies the circuit design and ensures easy integration into electronic systems.

Package Shape: ROUND

ROUND shape allows for efficient and compact placement on circuit boards.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): CYLINDRICAL

CYLINDRICAL package style facilitates easy installation and mounting in various electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the varactor diode can withstand harsh environmental conditions without compromising performance.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish ensures good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

BOTTOM terminal position enables easy soldering and maintenance during assembly.

Maximum Power Dissipation: 0.28 W

Higher maximum power dissipation allows the varactor diode to handle higher power levels without overheating.

Nominal Diode Capacitance: 15 pF

Optimal capacitance value for efficient frequency tuning and signal modulation in electronic circuits.

Minimum Breakdown Voltage: 30 V

Higher minimum breakdown voltage ensures reliable operation and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers flexibility in tuning frequencies and modulation in RF circuits.

Terminal Form: THROUGH-HOLE

THROUGH-HOLE terminal form allows for easy placement and soldering on PCBs.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% ensures consistent performance and accuracy in frequency modulation applications.

Diode Element Material: SILICON

SILICON material in the diode element offers high reliability, low loss, and stable performance over a wide temperature range.

Minimum Diode Capacitance Ratio: 2.5

Higher minimum capacitance ratio provides greater tuning range and flexibility in RF circuits.

Technical Specifications

Varactor Diodes MV2105RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2105RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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