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MV2105RLRM

Onsemi

MV2105RLRM by Onsemi

MV2105RLRM by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Nominal Capacitance of 15pF, and Breakdown Voltage of 30V. It is used in RF applications for tuning circuits due to its Variable Capacitance property and operates at a Max Temperature of 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,362 parts In-Stock

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Vyrian

USA . 977 parts In-Stock

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977

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Problanco Electronics

Mexico . 8,191 parts In-Stock

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Kulean Microsystems

USA . 6,236 parts In-Stock

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SupplyDigital Components

Austria . 5,252 parts In-Stock

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TANS Electronics

Latvia . 3,800 parts In-Stock

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UHIMA Technologies

Türkiye . 408 parts In-Stock

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Corohmni

South Africa . 381 parts In-Stock

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Corphita

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Overview

Unlock the potential of your electronic designs with the MV2105RLRM Varactor Diode by Onsemi. With a minimum quality factor of 400 and a wide operating temperature range, this diode offers exceptional performance and reliability. Perfect for applications in RF tuning, voltage-controlled oscillators, and frequency modulators, this diode provides precise and stable capacitance control. Trust in Onsemi's reputation for quality and innovation to enhance your projects. Experience the value and benefits that the MV2105RLRM brings to your designs today.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures stable and efficient performance in RF and microwave applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the varactor diode.

Config: SINGLE

Single configuration simplifies the design and integration process.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various devices.

No. of Terminals: 2

Two terminals make it easy to connect the varactor diode in a circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides space-saving and efficient design options.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various environments.

Terminal Finish: TIN LEAD

Tin lead finish ensures secure and reliable connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to solder and connect in a circuit.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation capability allows for efficient handling of power.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value for efficient tuning and performance in RF circuits.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage provides protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance in tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides for easy mounting and soldering in a circuit board.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance ensures consistent performance in tuning applications.

Diode Element Material: SILICON

Silicon material for diode element provides reliability and stability in operation.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio ensures a wide tuning range for flexible applications.

Technical Specifications

Varactor Diodes MV2105RLRM attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2105RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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