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MV2101RLRA

Onsemi

MV2101RLRA by Onsemi

MV2101RLRA by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance property and can operate at temperatures up to 150 °C.

Median Price

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USA . 5,072 parts In-Stock

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TANS Electronics

Latvia . 1,954 parts In-Stock

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Corphita

USA . 1,084 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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South Africa . 333 parts In-Stock

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Overview

Unlock a world of possibilities with the MV2101RLRA varactor diode by Onsemi. Known for their top-quality products, Onsemi delivers yet again with this versatile component. Perfect for applications requiring variable capacitance, this diode offers a minimum quality factor of 450 and a minimum breakdown voltage of 30V, ensuring reliable performance. With a nominal diode capacitance of 6.8pF and a maximum power dissipation of 0.28W, this diode provides exceptional value and benefits to customers looking for precision and efficiency in their electronic devices. Trust Onsemi for innovative solutions that exceed expectations.

Feature Benefit Bullets

Minimum Quality Factor: 450

A high minimum quality factor indicates good performance and reliability in electronic circuits.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable.

Config: SINGLE

Single configuration simplifies the circuit design and reduces complexity.

Package Shape: ROUND

The round package shape allows for easy installation and placement in electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and integration of the diode into circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides mechanical stability and ease of handling.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the diode can withstand demanding environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection in circuit boards.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation allows the diode to handle higher power levels without damage.

Nominal Diode Capacitance: 6.8 pF

Having a moderate capacitance value enables the diode to be used in various applications where capacitance is important.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage ensures the diode can handle higher voltage levels without breakdown.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode allows for tuning and adjustment in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connection and stability on circuit boards.

Diode Cap Tolerance: 10 %

The tolerance level of 10% ensures consistency and accuracy in capacitance values of the diode.

Diode Element Material: SILICON

Silicon as the diode element material offers good electrical performance and temperature stability.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 provides flexibility in capacitance values for different circuit requirements.

Technical Specifications

Varactor Diodes MV2101RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2101RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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