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BB198

NXP Semiconductors

BB198 by NXP Semiconductors

BB198 by NXP Semiconductors is a variable capacitance diode ideal for RF tuning applications. It features a nominal capacitance of 26.75 pF, operates b/w -65 °C to 150 °C, and has a max power dissipation of 0.3 W. Its compact design ensures efficient surface mount integration.

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3

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1k+

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Digiode

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Anansix

USA . 875 parts In-Stock

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875

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Vyrian

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One Stop Electronics

USA . 804 parts In-Stock

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$2.010

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Corphita

USA . 4,564 parts In-Stock

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UNI Independent Distributors

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Native Components

USA . 926 parts In-Stock

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Northwest PG Solutions

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Overview

Unlock superior performance with the BB198 from NXP Semiconductors, a leading name in innovative solutions. This versatile varactor diode offers exceptional stability and reliability, perfect for RF applications like tuning circuits and voltage-controlled oscillators. With its compact design and robust thermal range, the BB198 ensures high efficiency and longevity, giving you the confidence to elevate your projects to new heights. Experience the NXP advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it reliable for various applications.

Config: SINGLE

The single configuration allows for compact designs, facilitating integration into space-restricted circuits.

Surface Mount: YES

Surface mount technology enables easy integration into modern PCBs, enhancing manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape is standard for surface-mount devices, ensuring compatibility with various layouts and boards.

No. of Terminals: 2

With only two terminals, this diode is simple to use and integrate, while also enhancing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style is perfect for space-constrained applications without sacrificing performance.

Maximum Operating Temperature: 150 °C

This high maximum operating temperature allows for use in high-performance applications without the risk of thermal failure.

Minimum Operating Temperature: -65 °C

A low minimum operating temperature ensures functionality in extreme environments, making it suitable for a wide range of applications.

Terminal Finish: TIN

Tin terminal finish provides excellent solderability, ensuring reliable connections during assembly.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layouts, making it easier to incorporate into a variety of circuit designs.

Maximum Power Dissipation: 0.3 W

The power dissipation rating of 0.3 W makes this diode suitable for moderate power applications, balancing performance and cooling requirements.

Nominal Diode Capacitance: 26.75 pF

This nominal capacitance value is ideal for tuning and frequency modulation applications, enhancing circuit versatility.

Minimum Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this diode can safely handle a variety of voltage levels without failure.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is perfect for applications in RF tuning and filtering, providing adjustable capacitance for optimal performance.

Terminal Form: FLAT

The flat terminal form promotes better electrical contact and thermal performance, enhancing overall device reliability.

Diode Cap Tolerance: 6.54 %

A tolerance of 6.54% on the diode capacitance ensures precision in applications where accurate capacitance values are critical.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical properties, contributing to the device's performance and durability.

Minimum Diode Capacitance Ratio: 4.3

A minimum capacitance ratio of 4.3 allows for substantial variation in capacitance, making it versatile for different circuit requirements.

Technical Specifications

Varactor Diodes BB198 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

6.54 %

Minimum Diode Capacitance Ratio:

4.3

Nominal Diode Capacitance:

26.75 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.3 W

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BB198 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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