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1N5476

Onsemi

1N5476 by Onsemi

1N5476 by Onsemi is a varactor diode with 100pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Corel Iberica Componentes, S.L.

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Native Components

USA . 773 parts In-Stock

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Northwest PG Solutions

USA . 84 parts In-Stock

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Overview

Unleash the power of innovation with the 1N5476 Varactor Diode by Onsemi. Crafted with precision and expertise, this diode offers unmatched quality and reliability. Ideal for applications in RF tuning circuits, voltage-controlled oscillators, and frequency modulation systems, this diode provides superior performance and efficiency. With a minimum quality factor of 200 and a variable capacitance classification, the 1N5476 delivers exceptional value to customers seeking cutting-edge technology. Elevate your projects with the Onsemi advantage and experience the benefits of top-notch engineering and design.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass material provides durability and heat resistance to the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and saves space.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures sharp and precise change in capacitance with voltage variation.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and enhances overall performance of the diode.

Package Shape: ROUND

Round shape facilitates easy integration and mounting of the diode.

Reverse Test Voltage: 25 V

Safe operating voltage range for reliable performance.

No. of Terminals: 2

Simple two-terminal design for easy connection and circuit integration.

Package Style (Meter): LONG FORM

Long form package style provides stability and durability for long-term usage.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various environments.

Minimum Operating Temperature: -65 °C

Wide operating temperature range for versatility in different conditions.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and corrosion resistance.

Terminal Position: AXIAL

Axial terminal position for easy connection and mounting.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures stable operation.

Maximum Power Dissipation: 0.4 W

High power dissipation capability for handling heavy workloads.

Nominal Diode Capacitance: 100 pF

Standard capacitance value suitable for various applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage for reliable operation under high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for tuning and frequency adjustment in circuits.

Terminal Form: WIRE

Wire terminal form for easy connection and installation.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage for stable performance.

Diode Cap Tolerance: 20 %

Tight capacitance tolerance ensures consistent performance in different applications.

Diode Element Material: SILICON

Silicon material ensures high efficiency and reliability of the diode.

Minimum Diode Capacitance Ratio: 2.9

Minimum capacitance ratio ensures precise tuning and adjustment capabilities of the diode.

Technical Specifications

Varactor Diodes 1N5476 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

100 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5476 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-438-1564, 5961014381564

NIIN

014381564

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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