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1N5452

Onsemi

1N5452 by Onsemi

1N5452 by Onsemi is a Varactor Diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 250 and low reverse current of 0.00000002uA.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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LittleDiode

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Resion

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Problanco Electronics

Mexico . 3,196 parts In-Stock

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Northwest PG Solutions

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Overview

Unleash the power of innovation with the 1N5452 Varactor Diode by Onsemi. Crafted with precision and quality in mind, this diode offers a wide range of applications for customers seeking reliable and efficient performance. Whether you're working on RF tuning, frequency modulation, or voltage-controlled oscillators, this diode's high-quality construction and advanced technology deliver unparalleled value and benefits. Trust Onsemi to provide cutting-edge solutions with the 1N5452, setting the standard for excellence in the industry.

Feature Benefit Bullets

Minimum Quality Factor: 250

A higher quality factor indicates better performance and efficiency in the circuit, making this varactor diode a reliable choice.

Package Body Material: GLASS

Glass package body material provides good insulation and protection for the diode, ensuring its durability and reliability in various environmental conditions.

Config: SINGLE

Single configuration simplifies the circuit design and installation process, making it easier to use in various applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures fast and precise capacitance control, making this varactor diode suitable for applications requiring quick response and accuracy.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and improves efficiency in the circuit, making this varactor diode energy-efficient.

Package Shape: ROUND

Round package shape provides ease of mounting and integration in various circuit layouts, making it a convenient choice for designers.

Reverse Test Voltage: 25 V

With a reverse test voltage of 25V, this varactor diode can handle high reverse voltage conditions, ensuring reliable performance in different circuit scenarios.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and enhances compatibility with standard circuit configurations, making it easy to use in different applications.

Package Style (Meter): LONG FORM

Long form package style allows for efficient heat dissipation and compact design, making this varactor diode suitable for space-constrained applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the diode can withstand elevated temperatures without performance degradation, making it reliable in demanding environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature range allows the varactor diode to operate effectively in cold environments, ensuring its functionality in various temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliability for the connections, ensuring secure attachment in the circuit setup.

Terminal Position: AXIAL

Axial terminal position simplifies the wiring process and enhances compatibility with standard circuit layouts, making it user-friendly for installation.

Case Connection: ISOLATED

Isolated case connection improves the safety and reliability of the varactor diode by preventing potential short circuits, ensuring stable performance in the circuit.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4W, this varactor diode can handle higher power loads without overheating, making it suitable for power-intensive applications.

Nominal Diode Capacitance: 47 pF

Nominal capacitance value of 47pF provides precise control over the capacitance, making this varactor diode suitable for applications requiring accurate tuning.

Minimum Breakdown Voltage: 30 V

Higher minimum breakdown voltage ensures the varactor diode can handle voltage spikes without failing, ensuring long-term reliability in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers flexible capacitance control, allowing for versatile usage in various tuning and signal processing applications.

Terminal Form: WIRE

Wire terminal form enables easy connection and secure attachment in the circuit setup, ensuring reliable performance and stability.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30V, this varactor diode can handle reverse voltage fluctuations without damage, ensuring long-lasting performance.

Diode Cap Tolerance: 20 %

Having a 20% capacitance tolerance allows for flexibility in precise capacitance control, making this varactor diode suitable for applications requiring variable tuning.

Diode Element Material: SILICON

Silicon diode element material offers good conductivity and reliability, ensuring stable performance and durability in the circuit.

Minimum Diode Capacitance Ratio: 2.6

A higher minimum capacitance ratio of 2.6 provides better tuning range and flexibility, making this varactor diode suitable for a wide range of frequency adjustment applications.

Technical Specifications

Varactor Diodes 1N5452 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5452 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-916-0662, 5961009160662

NIIN

009160662

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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