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BB914E6327HTSA1

Infineon Technologies

BB914E6327HTSA1 by Infineon Technologies

Infineon's BB914E6327HTSA1 is a varactor diode with 43.75 pF capacitance, 18 V breakdown voltage, and 2 elements in common cathode configuration. Ideal for RF applications due to its variable capacitance feature and small outline package design for surface mount technology.

Median Price

$0.181

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 11,466 parts In-Stock

1+ parts

$0.136

100+ parts

-

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11,466

$0.136

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Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$0.181

100+ parts

$0.172

1k+ parts

$0.172

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-

150

$0.181

$0.172

$0.172

-

Mouser Electronics

USA . 5,805 parts In-Stock

1+ parts

$0.480

100+ parts

$0.213

1k+ parts

$0.137

10k+ parts

$0.113

5,805

$0.480

$0.213

$0.137

$0.113

Newark

USA . 5,980 parts In-Stock

1+ parts

$0.673

100+ parts

$0.290

1k+ parts

$0.210

10k+ parts

-

5,980

$0.673

$0.290

$0.210

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DigiKey

USA . 5,215 parts In-Stock

1+ parts

$0.680

100+ parts

$0.269

1k+ parts

$0.183

10k+ parts

$0.169

5,215

$0.680

$0.269

$0.183

$0.169

Rochester

USA . 66,699 parts In-Stock

1+ parts

-

100+ parts

$0.158

1k+ parts

$0.131

10k+ parts

$0.117

66,699

-

$0.158

$0.131

$0.117

Verical

USA . 53,799 parts In-Stock

1+ parts

-

100+ parts

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$0.146

53,799

-

-

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$0.146

Chip1Stop

Japan . 5,500 parts In-Stock

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5,500

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Element14

Singapore . 4,945 parts In-Stock

1+ parts

-

100+ parts

$19.360

1k+ parts

$12.310

10k+ parts

$12.070

4,945

-

$19.360

$12.310

$12.070

Farnell

UK . 2,205 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.145

10k+ parts

$0.099

2,205

-

$0.168

$0.145

$0.099

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 697 parts In-Stock

1+ parts

$0.110

100+ parts

-

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697

$0.110

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.163

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10

$0.163

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Vyrian

USA . 15,052 parts In-Stock

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15,052

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VNN

France . 1,000 parts In-Stock

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1,000

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Ashlea Components Ltd

UK . 197 parts In-Stock

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197

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 887 parts In-Stock

1+ parts

$0.056

100+ parts

-

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887

$0.056

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Semicontronic

India . 14,850 parts In-Stock

1+ parts

$0.094

100+ parts

$0.092

1k+ parts

$0.091

10k+ parts

-

14,850

$0.094

$0.092

$0.091

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Corphita

USA . 552 parts In-Stock

1+ parts

$0.104

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552

$0.104

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Aztec Data Supply Inc.

USA . 167 parts In-Stock

1+ parts

$0.119

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167

$0.119

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Argo Parts USA

USA . 1,209 parts In-Stock

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$0.163

100+ parts

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$0.158

1,209

$0.163

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-

$0.158

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.163

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500

$0.163

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.181

100+ parts

$0.172

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$0.172

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-

150

$0.181

$0.172

$0.172

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Modulus Dynamics

Lithuania . 8,922 parts In-Stock

1+ parts

$0.191

100+ parts

$0.183

1k+ parts

$0.176

10k+ parts

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8,922

$0.191

$0.183

$0.176

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Ampacity Inc.

Singapore . 15,071 parts In-Stock

1+ parts

$0.207

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15,071

$0.207

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Continental Prestige Electronics

USA . 5,500 parts In-Stock

1+ parts

$0.354

100+ parts

$0.194

1k+ parts

$0.113

10k+ parts

$0.085

5,500

$0.354

$0.194

$0.113

$0.085

QUARKTWIN TECHNOLOGY LTD

USA . 20,922 parts In-Stock

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20,922

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Overview

Unlock the potential of your electronic devices with the BB914E6327HTSA1 Varactor Diode from Infineon Technologies. Known for their high-quality components, Infineon delivers top-notch performance and reliability for a wide range of applications. Whether you're designing RF filters, voltage-controlled oscillators, or frequency modulators, this diode's variable capacitance and low breakdown voltage make it a versatile choice. Experience the value of Infineon's expertise and innovation with the BB914E6327HTSA1, where quality meets functionality for exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diodes, making them suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and having 2 elements provides flexibility in design.

Surface Mount: YES

Surface mount capability simplifies the assembly process and saves space on the PCB.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and solderability, enhancing the overall performance of the diodes.

Nominal Diode Capacitance: 43.75 pF

The specified capacitance level allows for precise tuning in RF applications, making this product suitable for frequency control.

Minimum Breakdown Voltage: 18 V

The high minimum breakdown voltage provides protection to the diodes against voltage spikes, increasing their reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Being variable capacitance diodes, they offer adjustable capacitance levels, enabling frequency modulation and tuning in various electronic circuits.

Diode Cap Tolerance: 2.86 %

The low tolerance value indicates consistent performance and accuracy in capacitance, ensuring reliable operation in critical applications.

Diode Element Material: SILICON

Silicon material offers high performance and stability in diode operation, contributing to the overall quality of the product.

Minimum Diode Capacitance Ratio: 2.28

The specified minimum capacitance ratio allows for a wide range of tuning capabilities, providing flexibility in circuit design and optimization.

Technical Specifications

Varactor Diodes BB914E6327HTSA1 attributes and parameters. Explore more Varactor Diodes devices from Infineon Technologies

Specs

Additional Features:

1.5% MATCHED SETS AVAILABLE

Minimum Breakdown Voltage:

18 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

2.86 %

Minimum Diode Capacitance Ratio:

2.28

Nominal Diode Capacitance:

43.75 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BB914E6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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