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BB910-TAPE-REEL

NXP Semiconductors

BB910-TAPE-REEL by NXP Semiconductors

BB910-TAPE-REEL by NXP Semiconductors is a variable capacitance diode ideal for very high to ultra-high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. This glass-packaged component ensures reliable performance in RF circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,615 parts In-Stock

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1,615

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Digiode

USA . 1,028 parts In-Stock

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1,028

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Vyrian

USA . 865 parts In-Stock

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865

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,230 parts In-Stock

1+ parts

$0.010

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1,230

$0.010

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Native Components

USA . 712 parts In-Stock

1+ parts

$0.276

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$0.265

712

$0.276

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$0.265

Northwest PG Solutions

USA . 249 parts In-Stock

1+ parts

$0.304

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$0.268

249

$0.304

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$0.268

Corphita

USA . 3,954 parts In-Stock

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3,954

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UNI Independent Distributors

Spain . 1,543 parts In-Stock

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1,543

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Overview

Elevate your designs with the BB910-TAPE-REEL from NXP Semiconductors, a trusted leader in innovative technology. This high-quality varactor diode excels in very high to ultra-high frequency applications, ensuring reliable performance in communications and tuning circuits. With its glass package and exceptional operating temperature range, it delivers unmatched stability and efficiency, empowering engineers to achieve superior results in their projects. Experience the NXP advantage today!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures high durability and thermal stability, making it ideal for high-frequency applications.

Config: SINGLE

A single configuration allows for simpler designs and easier implementation in various electronic circuits.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Designed to operate effectively in very high to ultra-high frequency bands, this diode is perfect for advanced RF applications.

Maximum Reverse Current: 0.01 uA

The low maximum reverse current makes this varactor diode efficient, minimizing power loss and improving performance.

Package Shape: ROUND

The round package shape allows for efficient space utilization and easy integration into existing designs.

Reverse Test Voltage: 28 V

With a reverse test voltage of 28 V, this diode can handle various testing conditions without failure, ensuring reliability.

No. of Terminals: 2

The two-terminal design simplifies connectivity in circuit layouts while maintaining performance integrity.

Package Style (Meter): LONG FORM

The long form package style can enhance mounting stability and thermal management in the device.

Maximum Operating Temperature: 100 °C

A maximum operating temperature of 100 °C ensures that the diode can function effectively in environments with varying temperatures.

Terminal Position: AXIAL

Axial terminal positioning provides versatility in mounting options, making integration into different circuit designs more straightforward.

Case Connection: ISOLATED

Isolated case connection prevents undesirable current paths, enhancing the performance reliability of the diode.

Minimum Breakdown Voltage: 32 V

The high minimum breakdown voltage indicates robust performance under reverse bias conditions, making it suitable for demanding applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it provides tunable capacitance for applications like voltage-controlled oscillators and frequency modulators.

Terminal Form: WIRE

Wire terminal form allows for easy soldering and attachment to circuit boards, facilitating flexible design layouts.

Diode Element Material: SILICON

Silicon as the diode element material ensures high efficiency and reliability, as well as good thermal conductivity.

Minimum Diode Capacitance Ratio: 14

A minimum capacitance ratio of 14 allows for significant tuning range, making this diode suitable for a variety of frequency tuning applications.

Technical Specifications

Varactor Diodes BB910-TAPE-REEL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

14

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB910-TAPE-REEL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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