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SVC354T

Onsemi

SVC354T by Onsemi

The Onsemi SVC354T is a Varactor Diode with a Min Quality Factor of 200, Breakdown Voltage of 16V, and Capacitance Ratio of 17.5. It is used in RF applications for frequency tuning due to its Variable Capacitance property and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,411 parts In-Stock

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Digiode

USA . 382 parts In-Stock

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382

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TANS Electronics

Latvia . 7,301 parts In-Stock

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Problanco Electronics

Mexico . 6,845 parts In-Stock

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Corphita

USA . 1,720 parts In-Stock

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Kulean Microsystems

USA . 941 parts In-Stock

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SupplyDigital Components

Austria . 470 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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UHIMA Technologies

Türkiye . 98 parts In-Stock

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Overview

Enhance your electronic designs with the SVC354T Varactor Diode by Onsemi. With a minimum quality factor of 200, this diode offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for applications requiring variable capacitance. Its small outline package shape and gull wing terminal form make it easy to integrate into your projects. Experience the benefits of precise control and flexibility in tuning circuits with the SVC354T, providing exceptional value for your electronic needs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for applications requiring high signal integrity.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the varactor diode, making it suitable for various environmental conditions.

Config: COMPLEX

The complex configuration enables versatility in tuning and adjusting capacitance levels, allowing for precise control in frequency-dependent applications.

Surface Mount: YES

Being surface mountable simplifies the installation process and saves space, making it ideal for compact electronic designs.

Package Shape: RECTANGULAR

The rectangular shape provides ease of handling and integration into circuit layouts, enhancing overall usability.

No. of Terminals: 6

Having 6 terminals allows for enhanced connectivity options and flexibility in circuit design, catering to various application requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving advantages without compromising on performance, making it a practical choice for miniaturized devices.

Terminal Position: DUAL

Dual terminal position enables efficient signal transmission and reception, ensuring reliable operation in multi-functional electronic systems.

Minimum Breakdown Voltage: 16 V

With a minimum breakdown voltage of 16 V, this varactor diode provides protection against voltage spikes and overloads, enhancing device longevity.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers adjustable capacitance levels, enabling precise tuning for frequency modulation and signal processing applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and assembly, contributing to smoother manufacturing processes and product reliability.

No. of Elements: 3

Having 3 elements enhances the diode's performance capability and operational efficiency, making it suitable for demanding electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 16 V

The high maximum repetitive peak reverse voltage rating of 16 V ensures robustness and resilience against reverse voltage conditions, ensuring long-term reliability.

Diode Cap Tolerance: 3.35 %

The tight diode capacitance tolerance of 3.35% guarantees accuracy and consistency in capacitance values, essential for precise frequency control applications.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides high performance and reliability, making this varactor diode suitable for a wide range of electronic applications.

Minimum Diode Capacitance Ratio: 17.5

The minimum diode capacitance ratio of 17.5 signifies strong capacitance modulation capability, allowing for versatile usage in frequency-dependent circuits.

Technical Specifications

Varactor Diodes SVC354T attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMPLEX

Diode Cap Tolerance:

3.35 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

3

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC354T Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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