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MMBV809LT3

Onsemi

MMBV809LT3 by Onsemi

MMBV809LT3 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. With a nominal capacitance of 5.3 pF and a breakdown voltage of 20 V, this small outline diode in a rectangular package is suitable for surface mount designs requiring precise tuning capabilities.

Median Price

$0.480

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 3,916 parts In-Stock

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Prism Electronics

USA . 8,754 parts In-Stock

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Vyrian

USA . 2,431 parts In-Stock

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Digiode

USA . 1,184 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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$0.480

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105

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 9,804 parts In-Stock

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Kulean Microsystems

USA . 7,208 parts In-Stock

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Problanco Electronics

Mexico . 6,848 parts In-Stock

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SupplyDigital Components

Austria . 6,725 parts In-Stock

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TANS Electronics

Latvia . 5,758 parts In-Stock

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UHIMA Technologies

Türkiye . 809 parts In-Stock

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Corphita

USA . 584 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MMBV809LT3 by Onsemi. As a leading manufacturer in the industry, Onsemi has crafted this varactor diode with precision and expertise to deliver optimal performance in ultra high frequency applications. With a minimum quality factor of 75 and hyperabrupt variable capacitance diode classification, this product offers unparalleled value and benefits to customers. Whether you're looking to enhance your communication systems or improve signal processing, the MMBV809LT3 is the perfect solution for all your needs. Experience innovation like never before with Onsemi's top-notch varactor diode.

Feature Benefit Bullets

Minimum Quality Factor: 75

A high minimum quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable.

Config: SINGLE

Single configuration simplifies the setup and enhances the reliability of the varactor diode.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification allows for precise control over capacitance, making it suitable for high-frequency applications.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high-frequency applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount capability makes the diode easy to install and saves space on the circuit board.

Package Shape: RECTANGULAR

Rectangular shape helps in easy placement and alignment of the varactor diode on the circuit board.

No. of Terminals: 3

Having 3 terminals allows for better connectivity and control within the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and makes the diode suitable for compact electronic devices.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connectivity options.

Maximum Power Dissipation: 0.225 W

High maximum power dissipation allows the diode to handle power fluctuations without damage.

Nominal Diode Capacitance: 5.3 pF

Nominal diode capacitance of 5.3 pF indicates the range of capacitance values it can provide in a circuit.

Minimum Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures the safety and reliability of the varactor diode during operation.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C allows for proper soldering and mounting of the diode on the circuit board.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers adjustable capacitance values for tuning in various applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical stability and ease of soldering during assembly.

Maximum Repetitive Peak Reverse Voltage: 20 V

Maximum repetitive peak reverse voltage of 20 V ensures protection against reverse voltage conditions in the circuit.

Diode Cap Tolerance: 15.09 %

Tight diode capacitance tolerance of 15.09% ensures consistent performance and accuracy in capacitance values.

Diode Element Material: SILICON

Silicon diode element material offers good temperature stability and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 1.8

A minimum diode capacitance ratio of 1.8 indicates the range of capacitance adjustment available for tuning purposes.

Technical Specifications

Varactor Diodes MMBV809LT3 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

15.09 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

5.3 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

75

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV809LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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