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SVC321SPAA

Onsemi

SVC321SPAA by Onsemi

The Onsemi SVC321SPAA is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a max reverse current of 0.1 uA and operating temperature up to 100 °C, it offers reliable performance in RF circuits. Its through-hole terminal form and rectangular package shape make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,190 parts In-Stock

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Vyrian

USA . 127 parts In-Stock

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Problanco Electronics

Mexico . 6,200 parts In-Stock

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SupplyDigital Components

Austria . 5,721 parts In-Stock

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TANS Electronics

Latvia . 3,921 parts In-Stock

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Corphita

USA . 2,081 parts In-Stock

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Kulean Microsystems

USA . 2,067 parts In-Stock

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Corohmni

South Africa . 257 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the SVC321SPAA Varactor Diode by Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance in every product they create. Varactor diodes are essential in applications such as frequency modulation, voltage-controlled oscillators, and phase-locked loops. With a minimum quality factor of 200 and a maximum reverse current of 0.1uA, the SVC321SPAA offers unparalleled value and benefits to customers seeking precision and efficiency in their designs. Trust Onsemi to provide the cutting-edge technology you need to bring your projects to life.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for various applications.

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in various circuit setups.

Maximum Reverse Current: 0.1 uA

Low reverse current indicates minimal power loss, contributing to the overall efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on circuit boards, enhancing convenience during assembly.

Reverse Test Voltage: 9 V

With a reverse test voltage of 9V, this varactor diode can safely handle reverse voltages without damage, ensuring long-term reliability.

No. of Terminals: 2

Two terminals provide simple connectivity options, making it easy to incorporate this diode into a circuit.

Package Style (Meter): IN-LINE

The in-line package style is compact and space-saving, making it suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this varactor diode can withstand high temperatures, making it suitable for a wide range of environments.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and allows for easy connection to other components.

Minimum Breakdown Voltage: 16 V

Higher breakdown voltage ensures the diode can withstand higher voltages without failing, making it a reliable choice for voltage regulation applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diodes are versatile components that can be used in frequency-tuning circuits and voltage-controlled oscillators, offering flexibility in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable solder connections, making installation and maintenance easier.

Maximum Repetitive Peak Reverse Voltage: 16 V

High repetitive peak reverse voltage rating ensures the diode can handle voltage spikes without damage, enhancing the overall reliability of the circuit.

Diode Cap Tolerance: 3 %

Low capacitance tolerance of 3% ensures consistent performance and accuracy in voltage-controlled applications, making this diode a precise and reliable choice.

Diode Element Material: SILICON

Silicon material offers good thermal conductivity and reliability, making it suitable for high-frequency and high-power applications.

Minimum Diode Capacitance Ratio: 15.5

Higher diode capacitance ratio provides greater tuning range and flexibility in frequency-tuning applications, making this varactor diode highly versatile.

Technical Specifications

Varactor Diodes SVC321SPAA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Diode Cap Tolerance:

3 %

Minimum Diode Capacitance Ratio:

15.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC321SPAA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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