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SVC342

Onsemi

SVC342 by Onsemi

The Onsemi SVC342 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 503 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 16 V and is designed with a COMMON CATHODE configuration for optimal performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,468 parts In-Stock

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Digiode

USA . 1,946 parts In-Stock

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Metaverse IC Inc.

Canada . 10,880 parts In-Stock

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Kepictronics

USA . 8,880 parts In-Stock

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SupplyDigital Components

Austria . 4,848 parts In-Stock

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Kulean Microsystems

USA . 4,227 parts In-Stock

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Problanco Electronics

Mexico . 3,786 parts In-Stock

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TANS Electronics

Latvia . 1,456 parts In-Stock

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Corphita

USA . 1,330 parts In-Stock

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UHIMA Technologies

Türkiye . 433 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the SVC342 Varactor Diode by Onsemi. Manufactured with precision and expertise, this diode offers a quality factor of 200, ensuring superior performance. Its common cathode configuration and two elements make it versatile for various applications. With a nominal capacitance of 503pF and a minimum breakdown voltage of 16V, this diode provides excellent value and benefits to customers looking for reliable and efficient components. Upgrade your electronic projects with the SVC342 and experience the difference in quality and performance.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures efficient performance and stable operation of the varactor diode.

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection to the diode, making it suitable for various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuits and enhances functionality.

Package Shape: ROUND

Round package shape offers easy mounting and installation of the varactor diode.

Nominal Diode Capacitance: 503 pF

The nominal diode capacitance of 503 pF ensures precise variable capacitance in the circuit.

Minimum Breakdown Voltage: 16 V

With a minimum breakdown voltage of 16 V, the varactor diode provides reliable protection against overvoltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers flexibility in adjusting capacitance according to circuit requirements.

No. of Elements: 2

Having 2 elements enhances the functionality and versatility of the diode in circuit design.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage of 16 V ensures the diode can handle voltage fluctuations without failure.

Minimum Diode Capacitance Ratio: 19.5

The minimum diode capacitance ratio of 19.5 allows for precise and efficient tuning in RF applications.

Technical Specifications

Varactor Diodes SVC342 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

19.5

Nominal Diode Capacitance:

503 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC342 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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