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MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.
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Higher quality factor indicates better performance and efficiency of the varactor diode, making it a reliable choice for applications requiring high frequency voltage control.
The use of plastic/epoxy package body material provides durability and protection to the components inside, ensuring longevity and stability in various operating conditions.
The common cathode configuration with 2 elements allows for efficient voltage control and modulation, making it suitable for RF and microwave applications.
Abrupt variable capacitance diodes offer sharp changes in capacitance with voltage variation, enabling precise tuning and modulation in high frequency circuits.
Designed for very high frequency applications, this varactor diode ensures superior performance in communication systems and RF devices operating at high frequencies.
The surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time in electronic designs.
The rectangular package shape offers a compact form factor, making it suitable for dense PCB layouts and space-constrained applications.
With 3 terminals, this varactor diode provides flexibility in circuit connections and configurations, enabling versatile design options for RF and microwave circuits.
The small outline package style saves board space and allows for efficient heat dissipation, making it ideal for high-density electronic applications.
Tin terminal finish ensures reliable solder connections and stable performance over time, minimizing signal loss and maintaining signal integrity in high frequency operations.
Dual terminal position offers flexibility in circuit layout and connections, allowing for convenient integration into various electronic designs with different terminal orientations.
With a maximum power dissipation of 0.225 W, this varactor diode can handle high power levels without overheating, ensuring continuous and reliable operation in demanding applications.
The nominal diode capacitance of 45.55 pF provides a wide range of capacitance values for voltage tuning and modulation, catering to diverse frequency requirements in RF and microwave circuits.
The minimum breakdown voltage of 14 V ensures protection against voltage spikes and overloads, enhancing the reliability and longevity of the varactor diode in high voltage applications.
As a variable capacitance diode, this product offers precise and controlled changes in capacitance with voltage, making it suitable for frequency tuning, filtering, and modulation in electronic circuits.
The gull wing terminal form provides secure and reliable surface mount connections, enabling easy soldering and rework while ensuring mechanical stability in harsh operating conditions.
Having 2 elements allows for independent control and modulation of capacitance, offering enhanced tuning capabilities for high frequency circuits, filters, and oscillators.
The maximum repetitive peak reverse voltage of 14 V ensures protection against reverse voltage spikes, safeguarding the varactor diode from damage and ensuring long-term reliability in electronic systems.
With a diode capacitance tolerance of 5.6%, this varactor diode offers consistent and accurate capacitance values, ensuring precise tuning and modulation in RF and microwave applications.
Utilizing silicon as the diode element material provides stability, reliability, and high performance in various temperature and frequency conditions, making it a versatile choice for RF and microwave applications.
The minimum diode capacitance ratio of 1.5 indicates a significant change in capacitance with voltage, enabling precise and efficient tuning in frequency-dependent circuits, filters, and oscillators.
Varactor Diodes MMBV432LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi
Additional Features:
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JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
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Variable Capacitance Diode Classification:
MMBV432LT1G Diodes trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.10.00.80
SB
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
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M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
MC7805CTG
Onsemi
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS3200T3G
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
1N4148
American Power Devices
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H753ZIT6
STMicroelectronics
STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Sangdest Microelectronics (Nanjing)
Infinex
MMBV2103LT1
MMBV2103LT1 by Onsemi is a varactor diode with a min quality factor of 400, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 10 pF and a min breakdown voltage of 30 V, making it ideal for RF tuning circuits in communication systems. The diode's small outline package with gull wing terminals and tin lead finish allows for easy surface mount assembly.
934057033115
NXP Semiconductors
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB804W
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVD302
SVD302 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. With a max operating temperature of 150 °C, it offers a nominal capacitance of 15 pF and min breakdown voltage of 27 V. This surface-mount diode in microwave package style has a max power dissipation of 0.5 W, making it suitable for high-frequency circuit designs.
GCX1204-23-0
Microchip Technology
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 1.8 pF; Minimum Quality Factor: 3000; Maximum Repetitive Peak Reverse Voltage: 30 V;
1SV325(TPH3,F)
Toshiba
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Package Style (Meter): SMALL OUTLINE; Variable Capacitance Diode Classification: ABRUPT;
BB141,115
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5474
1N5474 by Onsemi is a varactor diode with 68pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.
MDX596M
Texas Instruments
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V;
BB182,315
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;
MDX583M
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 35;
934056324115
BB901215
SVC203C
The Onsemi SVC203C is a Varactor Diode with 2 elements, offering a min Quality Factor of 60 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, with a Max Reverse Current of 0.05 uA. Ideal for applications requiring precise capacitance control in high-frequency circuits.
BB809T/R
VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB181,115
BB181,115 by NXP Semiconductors is a varactor diode with a max operating temperature of 125°C and a min of -55°C. It has a very high frequency band and a max repetitive peak reverse voltage of 30V. This diode is used in applications requiring variable capacitance at small outline packages.
MDX581D
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;
MMBV809LT3G
MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.
1N4789
1N4789 by Onsemi is a varactor diode with max reverse current of 0.005 uA and nominal capacitance of 12 pF. It has a breakdown voltage of 28 V, making it ideal for RF tuning applications in temperature range -65 to 150 °C.
BB417
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