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MMBV432LT1G

Onsemi

MMBV432LT1G by Onsemi

MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.

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Italy . 783 parts In-Stock

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Component Stockers USA

USA . 535 parts In-Stock

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SupplyDigital Components

Austria . 6,411 parts In-Stock

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Kulean Microsystems

USA . 4,959 parts In-Stock

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Problanco Electronics

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Corphita

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TANS Electronics

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UHIMA Technologies

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Overview

Enhance your electronic designs with the MMBV432LT1G by Onsemi, a top-quality varactor diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for very high frequency applications. With a common cathode configuration and two elements, this diode provides precise variable capacitance to meet your design needs. Its small outline package and gull wing terminal form make it easy to integrate into your circuits. Experience the benefits of superior quality and excellent value with the MMBV432LT1G from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 100

Higher quality factor indicates better performance and efficiency of the varactor diode, making it a reliable choice for applications requiring high frequency voltage control.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material provides durability and protection to the components inside, ensuring longevity and stability in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient voltage control and modulation, making it suitable for RF and microwave applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes offer sharp changes in capacitance with voltage variation, enabling precise tuning and modulation in high frequency circuits.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode ensures superior performance in communication systems and RF devices operating at high frequencies.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time in electronic designs.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact form factor, making it suitable for dense PCB layouts and space-constrained applications.

No. of Terminals: 3

With 3 terminals, this varactor diode provides flexibility in circuit connections and configurations, enabling versatile design options for RF and microwave circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and allows for efficient heat dissipation, making it ideal for high-density electronic applications.

Terminal Finish: TIN

Tin terminal finish ensures reliable solder connections and stable performance over time, minimizing signal loss and maintaining signal integrity in high frequency operations.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connections, allowing for convenient integration into various electronic designs with different terminal orientations.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this varactor diode can handle high power levels without overheating, ensuring continuous and reliable operation in demanding applications.

Nominal Diode Capacitance: 45.55 pF

The nominal diode capacitance of 45.55 pF provides a wide range of capacitance values for voltage tuning and modulation, catering to diverse frequency requirements in RF and microwave circuits.

Minimum Breakdown Voltage: 14 V

The minimum breakdown voltage of 14 V ensures protection against voltage spikes and overloads, enhancing the reliability and longevity of the varactor diode in high voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers precise and controlled changes in capacitance with voltage, making it suitable for frequency tuning, filtering, and modulation in electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable surface mount connections, enabling easy soldering and rework while ensuring mechanical stability in harsh operating conditions.

No. of Elements: 2

Having 2 elements allows for independent control and modulation of capacitance, offering enhanced tuning capabilities for high frequency circuits, filters, and oscillators.

Maximum Repetitive Peak Reverse Voltage: 14 V

The maximum repetitive peak reverse voltage of 14 V ensures protection against reverse voltage spikes, safeguarding the varactor diode from damage and ensuring long-term reliability in electronic systems.

Diode Cap Tolerance: 5.6 %

With a diode capacitance tolerance of 5.6%, this varactor diode offers consistent and accurate capacitance values, ensuring precise tuning and modulation in RF and microwave applications.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides stability, reliability, and high performance in various temperature and frequency conditions, making it a versatile choice for RF and microwave applications.

Minimum Diode Capacitance Ratio: 1.5

The minimum diode capacitance ratio of 1.5 indicates a significant change in capacitance with voltage, enabling precise and efficient tuning in frequency-dependent circuits, filters, and oscillators.

Technical Specifications

Varactor Diodes MMBV432LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, 1% MATCHING GUARANTEED

Minimum Breakdown Voltage:

14 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

5.6 %

Minimum Diode Capacitance Ratio:

1.5

Nominal Diode Capacitance:

45.55 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

100

Maximum Repetitive Peak Reverse Voltage:

14 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV432LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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