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Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
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MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.
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Higher quality factor indicates better performance and efficiency of the varactor diode, making it a reliable choice for applications requiring high frequency voltage control.
The use of plastic/epoxy package body material provides durability and protection to the components inside, ensuring longevity and stability in various operating conditions.
The common cathode configuration with 2 elements allows for efficient voltage control and modulation, making it suitable for RF and microwave applications.
Abrupt variable capacitance diodes offer sharp changes in capacitance with voltage variation, enabling precise tuning and modulation in high frequency circuits.
Designed for very high frequency applications, this varactor diode ensures superior performance in communication systems and RF devices operating at high frequencies.
The surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time in electronic designs.
The rectangular package shape offers a compact form factor, making it suitable for dense PCB layouts and space-constrained applications.
With 3 terminals, this varactor diode provides flexibility in circuit connections and configurations, enabling versatile design options for RF and microwave circuits.
The small outline package style saves board space and allows for efficient heat dissipation, making it ideal for high-density electronic applications.
Tin terminal finish ensures reliable solder connections and stable performance over time, minimizing signal loss and maintaining signal integrity in high frequency operations.
Dual terminal position offers flexibility in circuit layout and connections, allowing for convenient integration into various electronic designs with different terminal orientations.
With a maximum power dissipation of 0.225 W, this varactor diode can handle high power levels without overheating, ensuring continuous and reliable operation in demanding applications.
The nominal diode capacitance of 45.55 pF provides a wide range of capacitance values for voltage tuning and modulation, catering to diverse frequency requirements in RF and microwave circuits.
The minimum breakdown voltage of 14 V ensures protection against voltage spikes and overloads, enhancing the reliability and longevity of the varactor diode in high voltage applications.
As a variable capacitance diode, this product offers precise and controlled changes in capacitance with voltage, making it suitable for frequency tuning, filtering, and modulation in electronic circuits.
The gull wing terminal form provides secure and reliable surface mount connections, enabling easy soldering and rework while ensuring mechanical stability in harsh operating conditions.
Having 2 elements allows for independent control and modulation of capacitance, offering enhanced tuning capabilities for high frequency circuits, filters, and oscillators.
The maximum repetitive peak reverse voltage of 14 V ensures protection against reverse voltage spikes, safeguarding the varactor diode from damage and ensuring long-term reliability in electronic systems.
With a diode capacitance tolerance of 5.6%, this varactor diode offers consistent and accurate capacitance values, ensuring precise tuning and modulation in RF and microwave applications.
Utilizing silicon as the diode element material provides stability, reliability, and high performance in various temperature and frequency conditions, making it a versatile choice for RF and microwave applications.
The minimum diode capacitance ratio of 1.5 indicates a significant change in capacitance with voltage, enabling precise and efficient tuning in frequency-dependent circuits, filters, and oscillators.
Varactor Diodes MMBV432LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi
Additional Features:
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MMBV432LT1G Diodes trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.10.00.80
SB
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
LD1117S33CTR
STMicroelectronics
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
OPA2277UA
Texas Instruments
OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
1N4148WS
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Comchip Technology
SS14
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148W-T
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
933215290115
NXP Semiconductors
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2101RLRA
Onsemi
MV2101RLRA by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance property and can operate at temperatures up to 150 °C.
TIV307
TIV307 by Texas Instruments is a Varactor Diode with 200 min Quality Factor, 9 pF Nominal Capacitance, and 20 V Breakdown Voltage. Ideal for RF applications due to its Variable Capacitance nature and 0.25 W Power Dissipation capability in an Axial package style.
BB804TRL
BB804TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual terminal configuration and a min capacitance ratio of 1.65. Its compact rectangular package makes it ideal for RF tuning applications. This silicon-based component enhances circuit performance in communication devices.
MV1405
MV1405 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, nominal capacitance of 250 pF, and min breakdown voltage of 12 V. It is commonly used in RF applications for frequency tuning in communication systems due to its high capacitance ratio and low power dissipation capabilities.
1N5439
1N5439 by Onsemi is a Varactor Diode with a Min Quality Factor of 450, Nominal Capacitance of 3.3 pF, and Max Reverse Current of 0.00000002 uA. It is used in RF tuning circuits for applications requiring variable capacitance diodes.
MV2109RL1
MV2109RL1 by Onsemi is a single varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for applications requiring variable capacitance in RF circuits. With a breakdown voltage of 30V and power dissipation of 0.28W, this through-hole diode is ideal for high-frequency tuning in electronic devices.
BB145B
BB910116
VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC321C
The Onsemi SVC321C is a Varactor Diode with a Min Quality Factor of 200, Max Reverse Current of 0.1uA, and Min Breakdown Voltage of 16V. It is ideal for applications requiring variable capacitance diodes in electronic circuits operating up to 100 °C.
LV2209RLRE
LV2209RLRE by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25 V. It is used in applications requiring variable capacitance control, such as tuning circuits in RF communication systems. Operating temperature up to 150 °C makes it suitable for high-temperature environments.
BB149
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMVL2105T1G
MMVL2105T1G by Onsemi is a varactor diode with 15pF nominal capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for RF tuning applications due to its variable capacitance feature in a small outline package.
MMBV2108L
MMBV2108L by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.
1N5467
1N5467 by Onsemi is a Varactor Diode with a Min Quality Factor of 500, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 20 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
BB179BLX
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5685
1N5685 by Onsemi is a varactor diode with 15pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.00000002uA and high breakdown voltage of 45V.
1SV305,L3F
Toshiba
VARIABLE CAPACITANCE DIODE;
BB187T/R
BB804-0
BB804-0 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C, making it ideal for RF tuning circuits. Its compact surface mount design ensures efficient space utilization in electronic devices.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV2103L
MMBV109LT1G
MMBV2107LT1
MMBV2105L
MMBV2101LT1
MMBV2108LT1
MMBV105GLT1G
MMBV2103LT1
MMBV109LT3
MMBV2107L
MMBV2105LT1
MMBV2101L
MMBV2107LT1G
MMBV109LT1
MMBV2101LT1G
MMBV105GLT1
MMBV109L
MMBV109LT3G
MMBV2105LT1G
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