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MMBV2101LT1G

Onsemi

MMBV2101LT1G by Onsemi

MMBV2101LT1G by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. Ideal for high frequency to ultra-high frequency applications due to its abrupt variable capacitance diode classification. It comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

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PC Components Company LLC

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Bristol Electronics

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AZTECH Wire

Italy . 1,050 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Kepictronics

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Problanco Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Overview

Unlock the potential of your high-frequency circuit designs with the MMBV2101LT1G Varactor Diode by Onsemi. With a minimum quality factor of 450 and a nominal diode capacitance of 6.8 pF, this diode offers smooth and precise tuning capabilities for your RF applications. The high-quality construction and design by Onsemi ensure reliable performance and durability. Whether you are working on radio frequency amplifiers, voltage-controlled oscillators, or frequency modulators, this varactor diode provides unmatched value, benefits, and advantages to meet your project needs. Elevate your designs with the MMBV2101LT1G today!

Feature Benefit Bullets

Minimum Quality Factor: 450

Higher quality factor indicates better performance and efficiency in high frequency applications.

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environmental conditions.

Config: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic devices.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Ideal for applications requiring high frequency signal processing and amplification.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and improving manufacturability.

Package Shape: RECTANGULAR

Compact shape for efficient placement on circuit boards and space-saving designs.

No. of Terminals: 3

Provides necessary connections for circuit integration and functionality.

Terminal Finish: TIN

Ensures good electrical conductivity and resistance to corrosion, maintaining reliable performance.

Maximum Power Dissipation: 0.225 W

Can handle higher power levels without overheating, ensuring long-term reliability.

Nominal Diode Capacitance: 6.8 pF

Offers precise capacitance for voltage tuning and signal processing in high frequency applications.

Minimum Breakdown Voltage: 30 V

Provides protection against voltage surges and ensures stable operation within specified limits.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for voltage-controlled capacitance tuning, enabling versatile use in frequency modulation and tuning circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

Withstands reverse voltage without breakdown, protecting the diode from damage.

Technical Specifications

Varactor Diodes MMBV2101LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2101LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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