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MMBV2101L

Onsemi

MMBV2101L by Onsemi

MMBV2101L by Onsemi is a varactor diode with 6.8pF nominal capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF applications due to its variable capacitance feature and small outline package style.

Median Price

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Vyrian

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Kulean Microsystems

USA . 8,320 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 4,687 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 734 parts In-Stock

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UHIMA Technologies

Türkiye . 550 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MMBV2101L Varactor Diode by Onsemi. With a minimum quality factor of 450 and a nominal capacitance of 6.8 pF, this diode offers unparalleled performance and reliability. Whether you're working on RF tuning, voltage-controlled oscillators, or frequency modulators, this diode's variable capacitance and high breakdown voltage of 30 V make it the perfect choice for your application needs. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and experience the value and benefits that the MMBV2101L brings to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 450

High minimum quality factor indicates better performance and reliability of the varactor diode.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the diode, ensuring durability and long-term usage.

Config: SINGLE

Single configuration simplifies the design and installation process, making it easier to integrate into electronic circuits.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on circuit boards, saving space and providing a clean appearance.

Package Shape: RECTANGULAR

Rectangular package shape enhances the ease of placement and alignment during assembly, contributing to efficient production processes.

No. of Terminals: 3

Having 3 terminals allows for flexibility in connecting the diode within the circuit, enabling various configurations and usage scenarios.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and offers a streamlined appearance, suitable for compact electronic devices.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, facilitating a secure and reliable connection within the circuit.

Terminal Position: DUAL

Dual terminal position provides options for connecting the diode from different angles, enhancing versatility in circuit design.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, the diode can handle higher power levels without overheating, ensuring stable performance under different operating conditions.

Nominal Diode Capacitance: 6.8 pF

The nominal diode capacitance value indicates the range of capacitance the diode can provide, allowing for precise tuning in RF and microwave applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures the diode can withstand voltage spikes and surges, increasing its overall reliability and longevity.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers flexibility in adjusting capacitance levels, making it suitable for frequency tuning and voltage-controlled oscillator circuits.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and connection, enhancing the efficiency of the assembly process.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage rating ensures the diode's robustness and resilience against reverse voltage conditions.

Diode Cap Tolerance: 10 %

A 10% capacitance tolerance allows for accurate and consistent performance, ensuring predictable behavior in circuit applications.

Diode Element Material: SILICON

Silicon diode element material provides reliability and stability, making the varactor diode suitable for a wide range of electronic applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio indicates the tunability of the diode, allowing for precise control of capacitance levels in variable tuning circuits.

Technical Specifications

Varactor Diodes MMBV2101L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV2101L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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