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BB181,335

NXP Semiconductors

BB181,335 by NXP Semiconductors

BB181,335 by NXP Semiconductors is a surface mount variable capacitance diode ideal for tuning and frequency modulation. It features a max reverse voltage of 30V, peak reflow temp of 260 °C, and withstands up to 30s at peak reflow. Perfect for RF applications!

Median Price

$0.113

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,419,985 parts In-Stock

1+ parts

-

100+ parts

$0.113

1k+ parts

$0.094

10k+ parts

$0.084

1,419,985

-

$0.113

$0.094

$0.084

DigiKey

USA . 1,419,985 parts In-Stock

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-

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$0.120

1,419,985

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$0.120

Verical

USA . 1,419,985 parts In-Stock

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$0.105

1,419,985

-

-

-

$0.105

Distributors (In-Stock)

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Digiode

USA . 139 parts In-Stock

1+ parts

$0.088

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-

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139

$0.088

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Vyrian

USA . 1,900 parts In-Stock

1+ parts

$0.090

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1,900

$0.090

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Anansix

USA . 546 parts In-Stock

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546

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Distributors (Availability)

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Corphita

USA . 1,110 parts In-Stock

1+ parts

$0.084

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1,110

$0.084

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UNI Independent Distributors

Spain . 5,733 parts In-Stock

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5,733

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Microchip USA

USA . 5,051 parts In-Stock

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5,051

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Northwest PG Solutions

USA . 2,243 parts In-Stock

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2,243

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Native Components

USA . 792 parts In-Stock

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Overview

Unlock superior performance with the BB181,335 from NXP Semiconductors, a leading innovator in semiconductor technology. This high-quality varactor diode is designed for seamless integration in RF applications, delivering exceptional reliability and efficiency. With its surface mount capability and robust specifications, it ensures consistent operation even under demanding conditions. Elevate your projects with unparalleled value and the trusted expertise of NXP, where innovation meets quality!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact electronic circuits, making it a preferred choice for modern devices.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in various applications.

Maximum Time At Peak Reflow Temperature: 30 s

Limiting the maximum time at peak reflow temperature to 30 seconds helps to prevent thermal damage to the diode during assembly processes.

Peak Reflow Temperature: 260 C

A peak reflow temperature of 260 °C is optimal for compatibility with high-temperature soldering processes, making it suitable for high-performance applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers tunable capacitance properties, enabling efficient tuning and modulation in RF and microwave circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this diode can withstand various operational conditions, ensuring reliability and durability in diverse applications.

Technical Specifications

Varactor Diodes BB181,335 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BB181,335 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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