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SVC220

Onsemi

SVC220 by Onsemi

The Onsemi SVC220 is a Varactor Diode with 2 elements, common cathode config, and 45.25 pF nominal capacitance. Ideal for RF applications due to its 16 V breakdown voltage and high quality factor of 100. Its small outline package makes it suitable for surface mount designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,667 parts In-Stock

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Digiode

USA . 374 parts In-Stock

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Kepictronics

USA . 24,000 parts In-Stock

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SupplyDigital Components

Austria . 5,792 parts In-Stock

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TANS Electronics

Latvia . 5,554 parts In-Stock

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Problanco Electronics

Mexico . 5,107 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Kulean Microsystems

USA . 1,200 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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Corphita

USA . 196 parts In-Stock

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UHIMA Technologies

Türkiye . 176 parts In-Stock

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Overview

Unlock the full potential of your electronic projects with the SVC220 Varactor Diode by Onsemi. With a minimum quality factor of 100 and a unique common cathode configuration, this small outline diode offers superior performance and precision. Whether you're designing RF filters, voltage-controlled oscillators, or frequency multipliers, the SVC220 is the perfect choice for applications that demand reliability and efficiency. Trust in Onsemi's reputation for excellence and experience the value and benefits that the SVC220 brings to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 100

This high quality factor ensures efficient performance and reliable operation of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the diode, making it durable and suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for easy integration into circuits and provides flexibility in design.

Terminal Form: GULL WING

The gull wing terminal form facilitates surface mount assembly, making installation and replacement of the diode convenient.

Nominal Diode Capacitance: 45.25 pF

The nominal capacitance of 45.25 pF ensures precise tuning capability, making it ideal for applications requiring variable capacitance.

Minimum Breakdown Voltage: 16 V

The minimum breakdown voltage of 16 V provides protection against voltage spikes and ensures reliable operation under different conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for tuning and frequency control in RF and microwave circuits, offering versatility in applications.

No. of Elements: 2

Having 2 elements enables more precise control over capacitance values, enhancing the performance and tuning range of the diode.

Technical Specifications

Varactor Diodes SVC220 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

2.76 %

Minimum Diode Capacitance Ratio:

1.65

Nominal Diode Capacitance:

45.25 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

100

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC220 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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