Loading...

1N4786

Onsemi

1N4786 by Onsemi

1N4786 by Onsemi is a Varactor Diode with 15 min Quality Factor, 6.8 pF Nominal Capacitance, and -65 to 150 °C Operating Temp. Ideal for RF tuning circuits in communication devices due to its abrupt Variable Capacitance classification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,384 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,384

-

-

-

-

Digiode

USA . 753 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

753

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 927 parts In-Stock

1+ parts

$0.177

100+ parts

-

1k+ parts

-

10k+ parts

$0.170

927

$0.177

-

-

$0.170

Northwest PG Solutions

USA . 1,716 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

-

10k+ parts

$0.172

1,716

$0.195

-

-

$0.172

SupplyDigital Components

Austria . 6,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,300

-

-

-

-

TANS Electronics

Latvia . 5,667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,667

-

-

-

-

Kulean Microsystems

USA . 3,219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,219

-

-

-

-

Problanco Electronics

Mexico . 2,477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,477

-

-

-

-

Corphita

USA . 1,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,221

-

-

-

-

UHIMA Technologies

Türkiye . 565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

565

-

-

-

-

Corohmni

South Africa . 129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

129

-

-

-

-

Overview

Unlock endless possibilities with the Onsemi 1N4786 Varactor Diode! Manufactured by Onsemi, a renowned leader in semiconductor technology, this diode offers superior quality and reliability. Ideal for applications requiring variable capacitance, this diode provides precise control and efficient performance. With its high-quality construction and innovative design, the 1N4786 ensures optimal functionality in a wide range of electronic devices. Experience unmatched value and performance with the Onsemi 1N4786 Varactor Diode!

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor ensures better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass material offers durability and stability to the varactor diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the use and integration of the varactor diode in circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes have sharp and precise capacitance changes, allowing for accurate voltage control.

Maximum Reverse Current: 0.005 uA

Low reverse current ensures minimal power loss and higher efficiency of the varactor diode.

Package Shape: ROUND

Round shape allows for easy mounting and placement of the varactor diode in various electronic devices.

Reverse Test Voltage: 25 V

With a high reverse test voltage, the varactor diode can withstand reverse voltage stresses effectively.

No. of Terminals: 2

Having 2 terminals simplifies the connection and use of the varactor diode in circuits.

Package Style (Meter): LONG FORM

The long form package style provides easy handling and installation of the varactor diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance of the varactor diode in harsh environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can function in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides corrosion resistance and good solderability for the varactor diode.

Terminal Position: AXIAL

Axial terminal position allows for easy placement and connection of the varactor diode in circuits.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures proper functioning of the varactor diode.

Maximum Power Dissipation: 0.5 W

With a high maximum power dissipation, the varactor diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 6.8 pF

The nominal capacitance value indicates the range of capacitance the varactor diode can operate within.

Minimum Breakdown Voltage: 28 V

High minimum breakdown voltage ensures the varactor diode can handle voltage spikes without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers adjustable capacitance for voltage-controlled applications.

Terminal Form: WIRE

Wire terminal form allows for easy connection and soldering of the varactor diode in circuits.

Maximum Repetitive Peak Reverse Voltage: 25 V

The maximum repetitive peak reverse voltage rating indicates the maximum voltage the varactor diode can handle reliably.

Diode Cap Tolerance: 20 %

A higher capacitance tolerance allows for flexibility in circuit design and operation with the varactor diode.

Diode Element Material: SILICON

Silicon element material offers stability and reliability to the varactor diode for long-term performance.

Minimum Diode Capacitance Ratio: 2.4

The minimum capacitance ratio indicates the range of capacitance change the varactor diode can achieve, making it versatile for different applications.

Technical Specifications

Varactor Diodes 1N4786 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

28 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.4

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

25 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4786 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-001-3279, 5961000013279

NIIN

000013279

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20