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1N4795

Onsemi

1N4795 by Onsemi

1N4795 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 22V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.005uA.

Median Price

$19.190

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 2 parts In-Stock

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$19.190

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Digiode

USA . 707 parts In-Stock

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Vyrian

USA . 233 parts In-Stock

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Electronics Depot

USA . 9 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 232 parts In-Stock

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$19.190

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232

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Native Components

USA . 94 parts In-Stock

1+ parts

$477.445

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$467.896

1k+ parts

$463.122

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$458.347

94

$477.445

$467.896

$463.122

$458.347

Northwest PG Solutions

USA . 893 parts In-Stock

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$525.190

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893

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TANS Electronics

Latvia . 7,659 parts In-Stock

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7,659

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Kulean Microsystems

USA . 5,501 parts In-Stock

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SupplyDigital Components

Austria . 4,914 parts In-Stock

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Problanco Electronics

Mexico . 3,851 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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Corphita

USA . 660 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the 1N4795 Varactor Diode by Onsemi. Renowned for their high-quality components, Onsemi delivers top-notch performance and reliability. This single varactor diode offers a range of applications thanks to its variable capacitance and abrupt classification. With a wide operating temperature range and low power dissipation, this diode is perfect for a variety of uses. Trust Onsemi for superior quality and performance in your electronics projects.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor means better performance and efficiency of the varactor diode in electronic circuits.

Package Body Material: GLASS

Glass package body material provides durability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and allows for easy integration in electronics.

Maximum Reverse Current: 0.005 uA

Low reverse current results in minimal power loss and improved overall efficiency of the varactor diode.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and reliability of the connections.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in a wide range of temperature environments without compromising performance.

Nominal Diode Capacitance: 39 pF

Optimal capacitance value for the varactor diode ensures proper functioning in frequency-controlled circuits.

Minimum Breakdown Voltage: 22 V

Minimum breakdown voltage provides protection against voltage surges and ensures the durability of the diode.

Diode Element Material: SILICON

Silicon material for the diode element offers high reliability and stability in different operating conditions.

Technical Specifications

Varactor Diodes 1N4795 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.34

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

55 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4795 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-165-9331, 5961001659331

NIIN

001659331

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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