Loading...

MV1628

Onsemi

MV1628 by Onsemi

MV1628 by Onsemi is a single varactor diode with glass package, 15 pF nominal capacitance, and 20 V breakdown voltage. It is ideal for RF tuning applications due to its variable capacitance feature and high diode capacitance ratio of 2.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,838

-

-

-

-

Vyrian

USA . 921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

921

-

-

-

-

ECAB

Sweden . 46 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

46

-

-

-

-

EMSNET

USA . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,116

-

-

-

-

TANS Electronics

Latvia . 1,812 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,812

-

-

-

-

Kulean Microsystems

USA . 1,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,520

-

-

-

-

SupplyDigital Components

Austria . 1,059 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,059

-

-

-

-

Problanco Electronics

Mexico . 994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

994

-

-

-

-

Corohmni

South Africa . 368 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

368

-

-

-

-

UHIMA Technologies

Türkiye . 110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

110

-

-

-

-

Overview

Unlock the potential of your electronic designs with the MV1628 Varactor Diode by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers top-quality components that meet the highest industry standards. The MV1628 is perfect for applications requiring variable capacitance, such as frequency tuning and voltage-controlled oscillators. Offering a wide range of benefits including high performance, reliability, and precise control, this diode provides exceptional value to customers looking to optimize their circuit designs. Trust Onsemi to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides good thermal stability and reliability, making the varactor diode suitable for various operating conditions.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals ensures good conductivity and solderability, enhancing the overall performance of the varactor diode.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4W, this varactor diode can handle higher power levels without the risk of overheating or failure.

Nominal Diode Capacitance: 15 pF

The nominal capacitance of 15pF offers a wide range of capacitance values for tuning applications, making this varactor diode versatile and adaptable.

Minimum Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V ensures the varactor diode can withstand higher voltage levels, providing protection against voltage spikes and surges.

Technical Specifications

Varactor Diodes MV1628 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV1628 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-758-6056, 5961007586056, 5961-14-398-3424, 5961143983424

NIIN

007586056, 143983424

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20